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公开(公告)号:KR100070466B1
公开(公告)日:1994-01-28
申请号:KR1019910009530
申请日:1991-06-10
Applicant: 한국과학기술연구원
IPC: H01L21/469
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公开(公告)号:KR1019930008860B1
公开(公告)日:1993-09-16
申请号:KR1019910009530
申请日:1991-06-10
Applicant: 한국과학기술연구원
IPC: H01L21/469
Abstract: The semiconductory organic thin film is mfd. by (a) putting a substrate on the lower electrode of the low temp. plasma polymn. appts., (b) pressure-reducing the total system contg. an organic monomer and argon induction vent to be at most 5 millitorr, (c) argon plasma-pretreating it to remove off an adsorbed moisture on the substrate surface, and to improve an adhesion of a plasma polymn. film and the substrate, (d) regulating a supply velocity of the monomer vapour, and stabilizing a pressure of the reactor, (e) glow-discharging the monomer, and plasma-polymerizing it to deposit the organic thin film on the substrate, and (f) heat-treating the polymn. film.
Abstract translation: 半导体有机薄膜是mfd。 通过(a)将衬底放置在低温的下电极上。 等离子体聚合物 (b)降低系统总体压力 有机单体和氩气导入孔最多为5毫托,(c)氩等离子体预处理以除去基底表面上的吸附水分,并改善等离子体聚合物的粘附。 (d)调节单体蒸气的供应速度,稳定反应器的压力,(e)使单体辉光放电,并使其等离子体聚合以将有机薄膜沉积在基板上,以及 (f)热处理聚合物。 电影。
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公开(公告)号:KR1019930001356A
公开(公告)日:1993-01-16
申请号:KR1019910009530
申请日:1991-06-10
Applicant: 한국과학기술연구원
IPC: H01L21/469
Abstract: 내용 없음
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