公开(公告)号：KR100346015B1

公开(公告)日：2002-08-01

申请号：KR1019990053735

申请日：1999-11-30

Applicant: 한국과학기술연구원

Inventor： 금동화 ,  이지화 ,  김진상 ,  김주성

IPC: C23C16/00

Abstract: 본발명은유기금속화학증착법에의한단결정, 비정질또는다결정의 III족금속질화물박막의성장방법에있어서질소의공급원으로서활성상태의질소원자 (N, 질소원자-활성종)를사용하는것에관한것이다. 본발명에따르면, 종래의 III족금속질화물의유기금속화학증착법에서질소공급원으로사용되는암모니아기체 (NH) 대신, 질소원자-활성종, 특히유전체장벽방전에의한질소원자-활성종을사용함으로써, 약 700 ℃내지 1000 ℃의저온에서단결정사파이어 (α-AlO) 뿐만아니라, 실리콘 (Si), 갈륨비소 (GaAs) 또는석영웨이퍼, 또는다결정의실리카유리 (SiO-유리) 기판위에도단결정, 비정질또는다결정의 III족금속질화물박막을성장시킬수 있다. 또한, 암모니아를사용하는경우처럼질소원자-활성종을불필요하게많은양으로공급하지않아도될 뿐아니라, 필요에따라충분한양의질소원자-활성종을공급할수 있기때문에 III족금속질화물박막의성장속도가빨라진다.

公开(公告)号：KR1020010048874A

公开(公告)日：2001-06-15

申请号：KR1019990053735

申请日：1999-11-30

Applicant: 한국과학기술연구원

Inventor： 금동화 ,  이지화 ,  김진상 ,  김주성

IPC: C23C16/00

CPC classification number: C23C16/452 ,  C07F5/063 ,  C23C16/303

Abstract: PURPOSE: An organometallic compound chemical vapor deposition method is provided which grows a group III metallic nitride thin film on a substrate by using a nitrogen atom in the active state instead of ammonia as a nitrogen supplying source. CONSTITUTION: The method for growing a single crystalline group III metallic nitride thin film on a substrate comprises the process of chemical vapor deposition reacting the substrate at 700 to 1000 deg.C of a temperature of the substrate inside a chemical vapor deposition reactor using an organometallic compound precursors or a mixture thereof as a supplying source of group III elements, and using a nitrogen atom in the active state (nitrogen atom-active type) as a nitrogen supplying source, wherein the substrate is a crystalline sapphire (α-Al2O3), silicon (Si), gallium arsenic (GaAs) or quartz wafer, or silica glass.

Abstract translation: 目的：提供一种有机金属化合物化学气相沉积方法，其通过使用活性氮原子代替氮作为氮源，在基板上生长III族金属氮化物薄膜。 构成：在衬底上生长单晶III族金属氮化物薄膜的方法包括在化学气相沉积反应器内的化学气相沉积反应器中使用有机金属化合物使化学气相沉积在700至1000℃下使衬底的温度反应 化合物前体或其混合物作为III族元素的供应源，并且使用活性态的氮原子（氮原子活性型）作为氮供应源，其中所述基底是结晶蓝宝石（α-Al 2 O 3）， 硅（Si），砷化镓（GaAs）或石英晶片，或石英玻璃。