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公开(公告)号:KR100375335B1
公开(公告)日:2003-03-06
申请号:KR1020010002721
申请日:2001-01-17
Applicant: 한국과학기술연구원
IPC: C23C16/27
Abstract: PURPOSE: A method and an apparatus for manufacturing a diamond film are provided to manufacture a diamond film which is not damaged by accurately controlling temperature of a substrate, thus preventing temperature increase of the substrate during deposition and minimizing temperature gradient on the substrate horizontal surface. CONSTITUTION: In a method for manufacturing diamond film by vapor deposition, the method comprises the process of forming a power layer(9) having fluidity between a substrate(4) on which the diamond film is deposited and a substrate holder(5) so that the power layer(9) is used as a heat transfer medium between the substrate(4) and the substrate holder(5), wherein the powder layer(9) is consisted of a metal or ceramic powder, powder composing the powder layer is powder particles having a diameter of 1 mm or less, a separating preventing member such as a ring is formed on the outer side of the contact part between the substrate and the substrate holder to prevent external separation of the powder layer. The apparatus for manufacturing a diamond film by vapor deposition comprises a substrate on which the diamond film is deposited, a substrate holder holding the substrate, and a vacuum vessel receiving the substrate and substrate holder and connected to a plasma generating equipment, wherein the apparatus further comprises a powder layer formed between the substrate and the substrate holder.
Abstract translation: 目的:提供一种用于制造金刚石膜的方法和设备,以通过精确地控制基板的温度来制造未被损坏的金刚石膜,从而防止沉积期间基板的温度升高并且使基板水平表面上的温度梯度最小化。 本发明的方法包括以下步骤:在通过气相沉积制造金刚石膜的方法中,在其上沉积金刚石膜的基板(4)和基板保持器(5)之间形成具有流动性的功率层(9) (9)用作衬底(4)和衬底支架(5)之间的传热介质,其中粉末层(9)由金属或陶瓷粉末组成,构成粉末层的粉末是粉末 在基板和基板支架之间的接触部分的外侧上形成具有1mm或更小直径的颗粒,诸如环的分离防止构件,以防止粉末层的外部分离。 通过气相沉积制造金刚石膜的设备包括其上沉积金刚石膜的基底,保持基底的基底保持器,以及容纳基底和基底保持器并连接到等离子体发生设备的真空容器,其中该装置进一步 包括在衬底和衬底支架之间形成的粉末层。
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公开(公告)号:KR1020020061768A
公开(公告)日:2002-07-25
申请号:KR1020010002721
申请日:2001-01-17
Applicant: 한국과학기술연구원
IPC: C23C16/27
CPC classification number: C23C16/46 , C23C16/27 , C23C16/4585
Abstract: PURPOSE: A method and an apparatus for manufacturing a diamond film are provided to manufacture a diamond film which is not damaged by accurately controlling temperature of a substrate, thus preventing temperature increase of the substrate during deposition and minimizing temperature gradient on the substrate horizontal surface. CONSTITUTION: In a method for manufacturing diamond film by vapor deposition, the method comprises the process of forming a power layer(9) having fluidity between a substrate(4) on which the diamond film is deposited and a substrate holder(5) so that the power layer(9) is used as a heat transfer medium between the substrate(4) and the substrate holder(5), wherein the powder layer(9) is consisted of a metal or ceramic powder, powder composing the powder layer is powder particles having a diameter of 1 mm or less, a separating preventing member such as a ring is formed on the outer side of the contact part between the substrate and the substrate holder to prevent external separation of the powder layer. The apparatus for manufacturing a diamond film by vapor deposition comprises a substrate on which the diamond film is deposited, a substrate holder holding the substrate, and a vacuum vessel receiving the substrate and substrate holder and connected to a plasma generating equipment, wherein the apparatus further comprises a powder layer formed between the substrate and the substrate holder.
Abstract translation: 目的:提供用于制造金刚石膜的方法和装置,以制造金刚石膜,该金刚石膜不会通过精确地控制基板的温度而损坏,从而防止了沉积期间基板的温度升高并且使基板水平表面上的温度梯度最小化。 构成:在通过气相沉积制造金刚石膜的方法中,该方法包括在其上沉积金刚石膜的衬底(4)和衬底保持器(5)之间形成具有流动性的功率层(9)的工艺,使得 功率层(9)用作基板(4)和基板支架(5)之间的传热介质,其中粉末层(9)由金属或陶瓷粉末组成,粉末组成的粉末是粉末 直径在1mm以下的颗粒,诸如环的分离防止构件形成在基板和基板保持器之间的接触部分的外侧上,以防止粉末层的外部分离。 用于通过气相沉积制造金刚石膜的装置包括沉积金刚石膜的基板,保持基板的基板保持器和接收基板和基板保持器并连接到等离子体发生设备的真空容器,其中该装置进一步 包括在所述基板和所述基板保持件之间形成的粉末层。
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公开(公告)号:KR1020020023503A
公开(公告)日:2002-03-29
申请号:KR1020000055798
申请日:2000-09-22
Applicant: 한국과학기술연구원
IPC: H01L21/304
Abstract: PURPOSE: A polishing apparatus for a high-hardness wafer is provided to extend a lifetime of a surface plate and to improve polishing efficiency, by changing the structure of the surface plate and by using a simple power transmission structure to prevent the surface plate from being partly worn away. CONSTITUTION: The high-hardness wafer is polished by friction with the surface plate(1) rotating with respect to a rotation axis(3) connected to a motor(2). The surface plate is so formed to protrude that a polishing part(1') in direct contact with the high-hardness wafer has a width not greater than the diameter of the high-hardness wafer. A wafer rotating apparatus rotates at least one high-hardness wafer over the polishing part. A wafer pressuring apparatus pressures the high-hardness wafer to be closely adhered to the polishing part.
Abstract translation: 目的:提供一种用于高硬度晶片的抛光装置,通过改变表面板的结构和简单的动力传递结构来延长表面板的寿命并提高抛光效率,以防止表面板 部分磨损。 构成:通过与连接到电动机(2)的旋转轴(3)旋转的表面板(1)的摩擦磨擦高硬度晶片。 该表面板被形成为凸出,使得与高硬度晶片直接接触的抛光部分(1')的宽度不大于高硬度晶片的直径。 晶片旋转装置使抛光部上的至少一个高硬度晶片旋转。 晶片加压装置对高硬度晶片进行压力以紧密地附着于抛光部分。
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