公开(公告)号：KR1020010036949A

公开(公告)日：2001-05-07

申请号：KR1019990044158

申请日：1999-10-12

Applicant: 한국과학기술연구원

Inventor： 최원준 ,  강광남 ,  김선호 ,  우덕하 ,  이석 ,  한일기 ,  김회종 ,  이희택

IPC: H01L21/18

Abstract: PURPOSE: A method for locally forming a different band gap in a quantum well by a dielectric-semiconductor composite cover layer is provided to regulate a degree of disorder of the quantum well. CONSTITUTION: The method begins with growing an InGaAs/InGaAsP quantum well substrate by a chemical beam epitaxy technique. Next, a dielectric thin layer made of such as SiO2 or SiNx is formed as a cover layer on the quantum well substrate by a plasma-enhanced chemical deposition technique. After a heat treatment step is carried out at a temperature of 600 - 800°C for 4 - 16 minutes, the dielectric thin layer is removed. In addition, InP, InGaAs or InGaAsP is used as a semiconductor cover layer.

Abstract translation: 目的：提供通过介电半导体复合覆盖层在量子阱中局部形成不同带隙的方法，以调节量子阱的无序程度。 构成：该方法开始于通过化学束外延技术生长InGaAs / InGaAsP量子阱衬底。 接下来，通过等离子体增强化学沉积技术在量子阱基板上形成由SiO 2或SiN x构成的电介质薄层作为覆盖层。 在600-800℃的温度下进行4-16分钟的热处理步骤后，去除电介质薄层。 此外，使用InP，InGaAs或InGaAsP作为半导体覆盖层。

公开(公告)号：KR100326773B1

公开(公告)日：2002-03-12

申请号：KR1019990044158

申请日：1999-10-12

Applicant: 한국과학기술연구원

Inventor： 최원준 ,  강광남 ,  김선호 ,  우덕하 ,  이석 ,  한일기 ,  김회종 ,  이희택

IPC: H01L21/18

Abstract: 본발명은양자우물무질서화기술에서유전체-반도체덮개층조합에의한 InGaAs/InGaAsP 양자우물밴드갭의조작방법에관한것으로서, 유전자덮개층을이용하여 InGaAs/InGaAsP 양자우물구조기판에국부적으로다른밴드갭을형성하기위한양자우물무질서화공정에있어서, 상기유전체덮개층으로 SiN나 SiO를사용하고 InGaAs/InGaAsP 양자우물상부의반도체덮개층으로동일두께의 InP이나 InGaAs 혹은 InGaAsP 을사용하여양자우물을무질서화하는경우, 상기유전체덮개층및 반도체덮개층을이용한유전체-반도체조합을양자우물기판상에형성하고소정온도및소정시간의열처리를통하여양자우물구조기판에국부적으로다른밴드갭을형성시킴으로써양자우물구조의밴드갭이동량을조절할수 있다.

公开(公告)号：KR1020010077666A

公开(公告)日：2001-08-20

申请号：KR1020000005619

申请日：2000-02-07

Applicant: 한국과학기술연구원

Inventor： 최원준 ,  김선호 ,  우덕하 ,  이석 ,  한일기 ,  김회종 ,  강광남 ,  이희택

IPC: H01L31/12

Abstract: PURPOSE: A method for controlling a band gap of a semiconductor optical device having the structure of a quantum well is provided to prevent a quantum well substrate damaging by using a silicon nitride film as a dielectric cover layer and by controlling a flow ratio of ammonia gas. CONSTITUTION: A substrate having the structure of a quantum well is grown(S100). A dielectric cover layer is deposited on the substrate by a plasma chemical vapor deposition process(S200). A thermal processing is performed on the dielectric cover layer at a predetermined time(S300). The dielectric cover layer is removed(S400). A fluorescence spectrum is measured(S500).

Abstract translation: 目的：提供一种用于控制具有量子阱结构的半导体光学器件的带隙的方法，以通过使用氮化硅膜作为电介质覆盖层并通过控制氨气流量来防止量子阱基板损坏 。 构成：生长具有量子阱结构的衬底（S100）。 电介质覆盖层通过等离子体化学气相沉积工艺沉积在衬底上（S200）。 在规定时间对电介质覆盖层进行热处理（S300）。 去除电介质覆盖层（S400）。 测量荧光光谱（S500）。

公开(公告)号：KR100368791B1

公开(公告)日：2003-01-24

申请号：KR1020000005619

申请日：2000-02-07

Applicant: 한국과학기술연구원

Inventor： 최원준 ,  김선호 ,  우덕하 ,  이석 ,  한일기 ,  김회종 ,  강광남 ,  이희택

IPC: H01L31/12

Abstract: PURPOSE: A method for controlling a band gap of a semiconductor optical device having the structure of a quantum well is provided to prevent a quantum well substrate damaging by using a silicon nitride film as a dielectric cover layer and by controlling a flow ratio of ammonia gas. CONSTITUTION: A substrate having the structure of a quantum well is grown(S100). A dielectric cover layer is deposited on the substrate by a plasma chemical vapor deposition process(S200). A thermal processing is performed on the dielectric cover layer at a predetermined time(S300). The dielectric cover layer is removed(S400). A fluorescence spectrum is measured(S500).

Abstract translation: 目的：提供一种用于控制具有量子阱结构的半导体光学器件的带隙的方法，以通过使用氮化硅膜作为电介质覆盖层并通过控制氨气的流量比来防止量子阱衬底损坏 。 构成：生长具有量子阱结构的衬底（S100）。 通过等离子体化学气相沉积工艺在衬底上沉积电介质覆盖层（S200）。 在预定时间对电介质覆盖层进行热处理（S300）。 介电覆盖层被移除（S400）。 测量荧光光谱（S500）。