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公开(公告)号：KR100448989B1
公开(公告)日：2004-09-18
申请号：KR1020010062451
申请日：2001-10-10
Applicant: 한국과학기술연구원
IPC: G11B5/39
Abstract: PURPOSE: A magnetoresistive thin film with superior thermal characteristics for a top or bottom type spin valve and a method for manufacturing the same are provided to prevent the diffusion of elements generated in respective layers by forming a proper oxide layer in the laminate structure and the transmission of Mn generated in an antiferromagnetic layer to other layers, thereby improving the thermal characteristics. CONSTITUTION: A magnetoresistive thin film with superior thermal characteristics for a top type spin valve is in the laminate structure of a buffer layer, a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, an oxide layer, another second ferromagnetic layer, an antiferromagnetic layer, and a protecting layer stacked on a substrate in sequence. The structure is formed by deposition in the DC magnetron sputtering and the oxide layer is introduced in the process of the deposition.
Abstract translation: 目的：提供一种用于顶部或底部型自旋阀的具有优良热特性的磁阻薄膜及其制造方法，以通过在叠层结构中形成适当的氧化层来防止在各层中产生的元素扩散， 的在反铁磁性层中产生的Mn向其他层中转化，由此改善热特性。 一种顶部型自旋阀具有优良热特性的磁阻薄膜是在缓冲层，第一铁磁层，非磁性层，第二铁磁层，氧化层，另一第二铁磁层， 反铁磁层，以及依次堆叠在衬底上的保护层。 该结构通过在DC磁控管溅射中沉积而形成，并且在沉积过程中引入氧化物层。
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公开(公告)号：KR100479445B1
公开(公告)日：2005-03-30
申请号：KR1020020052321
申请日：2002-08-31
Applicant: 한국과학기술연구원
IPC: H01L29/82
Abstract: 본 발명은 풀 브리지 특성을 갖는 교환 바이어스형 스핀밸브를 이용한 자기센서 제조방법에 관한 것이다. 특히, 낮은 자계에서도 고민감도를 가진 스핀밸브 브리지 센서에 있어서 출력의 쌍극성과 최대 출력의 향상을 위한 스핀밸브 각 저항들의 고정 방향을 처리하는 새로운 방법에 관한 것이다.
본 발명에 따르면, 편평한 기판상에 서로 같은 방향의 고정 방향을 갖도록 R1,R3 저항 성분으로 예정된 부위에 제 1스핀밸브 박막을 형성하는 단계와; 상기 R1,R3 저항 성분의 제 1스핀밸브 박막을 마스크 패턴 및 건식식각하여 제 1미소 패터닝을 형성하는 단계와; 상기 제 1스핀밸브 박막의 고정 방향과 180도 정반대 고정방향으로 R2,R4 저항 성분으로 예정된 부위에 제 2스핀밸브 박막을 형성하는 단계와; 상기 R2,R4 저항 성분의 제 2스핀밸브 박막을 마스크 패턴 및 건식식각하여 제 2미소 패터닝을 형성하는 단계와; 상기 R1,R2,R3,R4 저항 성분의 브리지 회로 연결을 위한 컨택 배선을 형성하는 단계를 포함하는 것을 특징으로 하는 교환 바이어스형 스핀밸브를 이용한 자기센서 제조방법이 제시된다.-
公开(公告)号：KR100448990B1
公开(公告)日：2004-09-18
申请号：KR1020010062456
申请日：2001-10-10
Applicant: 한국과학기술연구원
IPC: G11B5/39
Abstract: PURPOSE: A magnetoresistive thin film of a superior thermal characteristics in a dual spin valve and a method for manufacturing the same are provided to insert a proper oxide layer to a fixed layer for blocking the diffusion of Mn generated in an antiferromagnetic layer with respect to other layers, thereby improving the thermal characteristics. By forming the oxide layer uniformly by heat treatment, a magnetoresistive rate is increased. CONSTITUTION: In a method for fabricating a magnetoresistive thin film of a superior thermal characteristics in a dual spin valve, the middle portions of magnetic layers positioned between an antiferromagnetic layer and a nonmagnetic layer and contacting the antiferromagnetic layers are oxidized at a proper condition, and magnetic layers are deposited again. The end product is subject to the heat treatment in the vacuum state applied with magnetic fields.
Abstract translation: 目的：提供一种在双自旋阀中具有优良热特性的磁阻薄膜及其制造方法，以将适当的氧化物层插入到固定层中，以阻止在反铁磁层中产生的Mn相对于其他 层，从而改善热特性。 通过热处理均匀地形成氧化物层，磁阻率增加。 本发明的目的在于提供一种在双自旋阀中制造具有优异热特性的磁阻薄膜的方法，位于反铁磁层和非磁层之间并与反铁磁层接触的磁层的中间部分在适当的条件下被氧化， 磁层再次沉积。 最终产品在施加磁场的真空状态下经受热处理。
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公开(公告)号：KR1020040020662A
公开(公告)日：2004-03-09
申请号：KR1020020052321
申请日：2002-08-31
Applicant: 한국과학기술연구원
IPC: H01L29/82
Abstract: PURPOSE: A method for fabricating a magnetic sensor using an exchange bias type spin valve having a full-bridge characteristic is provided to enhance the reliability and the stability by controlling resistance variations of four resistors to obtain the full-bridge characteristic. CONSTITUTION: The first spin valve layer is formed on a predetermined region for forming resistor elements of R1 and R3 to obtain the same spinning direction on a flat substrate. The first fine pattern is formed by performing a mask pattern process and a dry-etch process for the first spin valve layer. The second spin valve layer is formed on a predetermined region for forming resistor elements of R2 and R4 to obtain the opposite spinning direction to the predetermined region for forming resistor elements of R1 and R3. The second fine pattern is formed by performing a mask pattern process and a dry-etch process for the second spin valve layer. A contact wiring process is performed to form a bridge circuit including the resistor elements of R1, R2, R3,and R4.
Abstract translation: 目的：提供一种使用具有全桥特性的交换偏压型自旋阀制造磁传感器的方法，通过控制四个电阻的电阻变化来提高可靠性和稳定性，以获得全桥特性。 构成：第一自旋阀层形成在用于形成R1和R3的电阻元件的预定区域上，以在平坦基板上获得相同的旋转方向。 第一精细图案通过对第一自旋阀层进行掩模图案处理和干蚀刻工艺而形成。 第二自旋阀层形成在用于形成R2和R4的电阻元件的预定区域上，以获得与用于形成R1和R3的电阻元件的预定区域相反的纺丝方向。 通过对第二自旋阀层进行掩模图案处理和干法蚀刻工艺来形成第二精细图案。 执行接触布线处理以形成包括R1，R2，R3和R4的电阻元件的桥接电路。
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公开(公告)号：KR1020030029756A
公开(公告)日：2003-04-16
申请号：KR1020010062456
申请日：2001-10-10
Applicant: 한국과학기술연구원
IPC: G11B5/39
Abstract: PURPOSE: A magnetoresistive thin film of a superior thermal characteristics in a dual spin valve and a method for manufacturing the same are provided to insert a proper oxide layer to a fixed layer for blocking the diffusion of Mn generated in an antiferromagnetic layer with respect to other layers, thereby improving the thermal characteristics. By forming the oxide layer uniformly by heat treatment, a magnetoresistive rate is increased. CONSTITUTION: In a method for fabricating a magnetoresistive thin film of a superior thermal characteristics in a dual spin valve, the middle portions of magnetic layers positioned between an antiferromagnetic layer and a nonmagnetic layer and contacting the antiferromagnetic layers are oxidized at a proper condition, and magnetic layers are deposited again. The end product is subject to the heat treatment in the vacuum state applied with magnetic fields.
Abstract translation: 目的：提供双自旋阀中具有优异热特性的磁阻薄膜及其制造方法，以将适当的氧化物层插入固定层，以阻止相对于其他反铁磁层产生的Mn的扩散 从而改善了热特性。 通过热处理来均匀地形成氧化物层，磁阻率提高。 构成：在双自旋阀中制造具有优异热特性的磁阻薄膜的方法中，位于反铁磁层与非磁性层之间并接触反铁磁层的磁性层的中间部分在适当的条件下被氧化，并且 再次沉积磁性层。 最终产品在施加磁场的真空状态下进行热处理。
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Patent Agency Ranking
公开(公告)号：KR100597714B1
公开(公告)日：2006-07-05
申请号：KR1020010057534
申请日：2001-09-18
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: 본 발명은 열적특성이 향상된 ＭＲＡＭ용 ＴＭＲ소자 및 제조방법에 관한 것으로서, 더 상세하게는 TMR구조중 피고정층인 제1강자성층에 산화층을 형성하여 반강자성층에서 발생하는 Mn확산을 차단, 다른 층으로 이동하는 것을 막아 줌으로써 TMR소자의 열적 특성을 향상시킴과 동시에 열처리를 통하여 균일한 산화층을 형성할 수 있는 것이다.
그러므로 MRAM 제조시 CMOS와의 결합을 위해 적용되는 플라즈마 향상 화학 기상증착법 및 소결 공정등의 요구조건에 적합하다.
MRAM, 터널링 자기소자, 산화층, 열적특성, 자기저항비, 교환자기이방성-
公开(公告)号：KR1020040020663A
公开(公告)日：2004-03-09
申请号：KR1020020052322
申请日：2002-08-31
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for fabricating a bridge sensor using an exchange bias type spin valve is provided to obtain the full-bridge characteristic by controlling differently variations of resistance direction of four resistors on one substrate. CONSTITUTION: A mask pattern is formed on a predetermined region of a flat substrate. A photoresist layer is formed thereon. The first spin valve layer is deposited on a predetermined region for forming two resistor elements having the same spinning direction. The photoresist layer is removed therefrom. A mask pattern is formed on the first spin valve layer. A photoresist layer is formed thereon. The second spin valve layer is deposited on a predetermined region for forming two resistor elements having the same spinning direction. The photoresist layer is removed therefrom. A mask for four resistor element patterns is formed and an etch process for the mask is performed. A wiring forming process is performed to form contact lines of four resistor elements.
Abstract translation: 目的：提供一种使用交流偏置型自旋阀制造桥式传感器的方法，通过控制一个基板上四个电阻器的电阻方向的不同变化来获得全桥特性。 构成：在平坦基板的预定区域上形成掩模图案。 在其上形成光致抗蚀剂层。 第一自旋阀层沉积在用于形成具有相同纺丝方向的两个电阻元件的预定区域上。 从其中除去光致抗蚀剂层。 在第一自旋阀层上形成掩模图案。 在其上形成光致抗蚀剂层。 第二自旋阀层沉积在用于形成具有相同纺丝方向的两个电阻元件的预定区域上。 从其中除去光致抗蚀剂层。 形成用于四个电阻元件图案的掩模，并且执行掩模的蚀刻工艺。 执行布线形成处理以形成四个电阻元件的接触线。
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公开(公告)号：KR1020010100084A
公开(公告)日：2001-11-14
申请号：KR1020010057534
申请日：2001-09-18
Applicant: 한국과학기술연구원
IPC: G11C11/15
CPC classification number: G11C11/161 , H01L43/08 , H01L43/12
Abstract: 본 발명은 열적특성이 향상된 ＭＲＡＭ용 ＴＭＲ소자 및 제조방법에 관한 것으로서, 더 상세하게는 TMR구조중 피고정층인 제1강자성층에 산화층을 형성하여 반강자성층에서 발생하는 Mn확산을 차단, 다른 층으로 이동하는 것을 막아 줌으로써 TMR소자의 열적 특성을 향상시킴과 동시에 열처리를 통하여 균일한 산화층을 형성할 수 있는 것이다.
그러므로 MRAM 제조시 CMOS와의 결합을 위해 적용되는 플라즈마 향상 화학 기상증착법 및 소결 공정등의 요구조건에 적합하다.-
公开(公告)号：KR100462792B1
公开(公告)日：2004-12-20
申请号：KR1020020052322
申请日：2002-08-31
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for fabricating a bridge sensor using an exchange bias type spin valve is provided to obtain the full-bridge characteristic by controlling differently variations of resistance direction of four resistors on one substrate. CONSTITUTION: A mask pattern is formed on a predetermined region of a flat substrate. A photoresist layer is formed thereon. The first spin valve layer is deposited on a predetermined region for forming two resistor elements having the same spinning direction. The photoresist layer is removed therefrom. A mask pattern is formed on the first spin valve layer. A photoresist layer is formed thereon. The second spin valve layer is deposited on a predetermined region for forming two resistor elements having the same spinning direction. The photoresist layer is removed therefrom. A mask for four resistor element patterns is formed and an etch process for the mask is performed. A wiring forming process is performed to form contact lines of four resistor elements.
Abstract translation: 目的：提供一种使用交换偏置型自旋阀来制造桥式传感器的方法，以通过不同地控制一个基板上的四个电阻器的电阻方向的变化来获得全桥特性。 构成：掩模图案形成在平坦衬底的预定区域上。 在其上形成光致抗蚀剂层。 第一自旋阀层被沉积在用于形成具有相同纺纱方向的两个电阻器元件的预定区域上。 光致抗蚀剂层从中被去除。 在第一自旋阀层上形成掩模图案。 在其上形成光致抗蚀剂层。 第二自旋阀层沉积在用于形成具有相同纺纱方向的两个电阻器元件的预定区域上。 光致抗蚀剂层从中被去除。 形成用于四个电阻器元件图案的掩模并且执行用于掩模的蚀刻工艺。 执行布线形成工艺以形成四个电阻器元件的接触线。
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公开(公告)号：KR1020030029755A
公开(公告)日：2003-04-16
申请号：KR1020010062451
申请日：2001-10-10
Applicant: 한국과학기술연구원
IPC: G11B5/39
Abstract: PURPOSE: A magnetoresistive thin film with superior thermal characteristics for a top or bottom type spin valve and a method for manufacturing the same are provided to prevent the diffusion of elements generated in respective layers by forming a proper oxide layer in the laminate structure and the transmission of Mn generated in an antiferromagnetic layer to other layers, thereby improving the thermal characteristics. CONSTITUTION: A magnetoresistive thin film with superior thermal characteristics for a top type spin valve is in the laminate structure of a buffer layer, a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, an oxide layer, another second ferromagnetic layer, an antiferromagnetic layer, and a protecting layer stacked on a substrate in sequence. The structure is formed by deposition in the DC magnetron sputtering and the oxide layer is introduced in the process of the deposition.
Abstract translation: 目的：提供一种用于顶部或底部型自旋阀的具有优异热特性的磁阻薄膜及其制造方法，以通过在层叠结构中形成适当的氧化物层，并且在透光性 在反铁磁层中产生的Mn与其它层的结合，从而提高了热特性。 构成：用于顶部型自旋阀的具有优异热特性的磁阻薄膜在缓冲层，第一铁磁层，非磁性层，第二铁磁层，氧化物层，另一第二铁磁层， 反铁磁性层和依次层叠在基板上的保护层。 该结构通过在DC磁控溅射中沉积形成，并且在沉积过程中引入氧化物层。
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