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公开(公告)号：KR100737826B1
公开(公告)日：2007-07-12
申请号：KR1020050132644
申请日：2005-12-28
Applicant: 한국과학기술연구원
Abstract: 본 발명은 고주파특성 및 성형성이 우수한 비정질분말 코어 및 그 제조방법에 관한 것이다. 본 발명에 따른 제조방법은 Fe-Si-B계 비정질분말을 제조하는 단계, 무전해 도금에 의해 Fe-Si-B계 비정질분말표면에 구리를 균일하게 코팅하는 단계, 구리가 코팅된 Fe-Si-B계 비정질분말을 산화시켜 표면에 구리 산화물을 형성시키는 단계, 구리 산화물이 표면에 형성된 Fe-Si-B계 비정질분말을 성형하여 코어를 제조하는 단계를 포함한다. 본 발명에 따른 구리 산화물이 표면에 형성된 Fe-Si-B계 비정질분말은 분말 표면을 거칠게 함으로써 분말 상호간의 결합을 증가시켜 소성변형을 하지 않아 성형이 불가능한 비정질분말을 성형이 가능하게 하며, 표면에 형성된 구리 산화물에 의해 비정질분말 간의 전기적 절연을 향상시켜 고주파대역에서 투자율의 변화가 작고, 자심손실이 작은 비정질분말 코어를 제조할 수 있다.
비정질 분말, 구리, 무전해 도금, 산화, 고주파특성, 자심손실(Core, Loss)-
公开(公告)号：KR1020070016497A
公开(公告)日：2007-02-08
申请号：KR1020050071229
申请日：2005-08-04
Applicant: 한국과학기술연구원
CPC classification number: C22C38/005 , B82Y40/00 , C22C38/02 , C22C38/06 , C22C38/16
Abstract: 본 발명은 주철을 이용한 Fe계 나노 구조 합금 및 그 제조 방법에 관한 것이다. 본 발명에 따른 Fe계 나노 구조 합금은 일반식 Fe
100-abcdefg Al
a C
b B
c Si
d Cu
e M
f I
g 의 조성을 가진다. 여기서, M은 Y 또는 희토류 원소 중에서 선택된 하나 이상의 원소이고, I는 Mn, Cr, P, S, O 중에서 선택된 하나 이상의 원소이며, a, b, c, d, e, f, g는 원자%로 각각 5.5≤a≤11.0, 4.0≤b≤8.5, 10.5≤c≤17.0, 1.5≤d≤5.5, 0.3≤e≤1.3, 0.1≤f≤2.0, 0.1≤g≤1.0이다.
비정질, 연자성, 주철, Fe계 나노 구조 합금-
公开(公告)号：KR100652860B1
公开(公告)日：2006-12-04
申请号：KR1020050102927
申请日：2005-10-31
Applicant: 한국과학기술연구원
IPC: H05K9/00
Abstract: A noise suppressing film, a noise-suppressed circuit substrate, and a method of manufacturing the same are provided to guarantee a high electromagnetic wave suppressing effect in a wireless frequency band with a thickness under 100 micron by forming the noise suppressing film at a substrate or a film. In a noise suppressing film, a pattern layer(11) is formed by crossing a magnetic substance(11a) and a resistor(11b). A magnetic layer(12) is formed to be laminated on the pattern layer(11). The magnetic substance(11a) and the resistor(11b) are arranged in a thickness direction. The pattern layer(11) absorbs the electromagnetic wave. The magnetic layer(12) protects the pattern layer(11) and absorbs the remaining electromagnetic wave.
Abstract translation: 提供噪声抑制膜，噪声抑制电路基板及其制造方法，以通过在基板上形成噪声抑制膜来保证在厚度小于100微米的无线频带中的高电磁波抑制效果或 一个电影。 在噪声抑制膜中，图案层（11）通过交叉磁性物质（11a）和电阻器（11b）而形成。 磁性层（12）形成为层叠在图案层（11）上。 磁性物质（11a）和电阻（11b）沿厚度方向排列。 图案层（11）吸收电磁波。 磁性层（12）保护图案层（11）并吸收剩余的电磁波。
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公开(公告)号：KR100450025B1
公开(公告)日：2004-09-24
申请号：KR1020020003098
申请日：2002-01-18
Applicant: 한국과학기술연구원 , 한화나노텍 주식회사
Abstract: PURPOSE: A flat type field emission lamp and a method for manufacturing the same are provided to achieve improved luminous efficiency and obtain a uniform luminous area even when the thickness of the lamp is thin. CONSTITUTION: A field emission lamp comprises a rear substrate(21) and a front substrate opposed with each other; a cathode electrode(22) arranged on the rear substrate; a grid electrode(23) arranged on the rear substrate in such a manner that the grid electrode crosses with the cathode electrode; a spacer(25) for heating and sealing the space formed between the rear substrate and the front substrate; a cathode electrode arranged all over the front substrate; a phosphor deposited on the anode electrode; a carbon nanotube(24) arranged on the cathode electrode and which serves as an electron emitting member; a grid(27) interposed between the cathode electrode and the anode electrode so as to control the electron emitted from the carbon nanotube; a support board(26) disposed on the rear substrate so as to install the grid; and a conductive paste deposited on the outer surface of the support board so as to electrically ground the grid to the grid electrode disposed on the rear substrate.
Abstract translation: 目的：提供一种扁平型场致发射灯及其制造方法，以实现提高的发光效率并且即使在灯的厚度较薄时也能获得均匀的发光面积。 构成：场致发射灯包括彼此相对的后基板（21）和前基板; 设置在后基板上的阴极电极（22） 栅格电极（23），其布置在后基板上，使得栅格电极与阴极电极交叉; （25），用于加热和密封在后基板和前基板之间形成的空间; 整个前基板上布置的阴极电极; 沉积在阳极电极上的磷光体; 碳纳米管（24），其布置在所述阴极电极上并且用作电子发射构件; 介于阴极和阳极之间的栅极（27），以控制从碳纳米管发射的电子; 支撑板（26），设置在后基板上以安装网格; 以及沉积在支撑板的外表面上的导电膏，以便将栅格电接地到设置在后基板上的栅电极。
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公开(公告)号：KR100448990B1
公开(公告)日：2004-09-18
申请号：KR1020010062456
申请日：2001-10-10
Applicant: 한국과학기술연구원
IPC: G11B5/39
Abstract: PURPOSE: A magnetoresistive thin film of a superior thermal characteristics in a dual spin valve and a method for manufacturing the same are provided to insert a proper oxide layer to a fixed layer for blocking the diffusion of Mn generated in an antiferromagnetic layer with respect to other layers, thereby improving the thermal characteristics. By forming the oxide layer uniformly by heat treatment, a magnetoresistive rate is increased. CONSTITUTION: In a method for fabricating a magnetoresistive thin film of a superior thermal characteristics in a dual spin valve, the middle portions of magnetic layers positioned between an antiferromagnetic layer and a nonmagnetic layer and contacting the antiferromagnetic layers are oxidized at a proper condition, and magnetic layers are deposited again. The end product is subject to the heat treatment in the vacuum state applied with magnetic fields.
Abstract translation: 目的：提供一种在双自旋阀中具有优良热特性的磁阻薄膜及其制造方法，以将适当的氧化物层插入到固定层中，以阻止在反铁磁层中产生的Mn相对于其他 层，从而改善热特性。 通过热处理均匀地形成氧化物层，磁阻率增加。 本发明的目的在于提供一种在双自旋阀中制造具有优异热特性的磁阻薄膜的方法，位于反铁磁层和非磁层之间并与反铁磁层接触的磁层的中间部分在适当的条件下被氧化， 磁层再次沉积。 最终产品在施加磁场的真空状态下经受热处理。
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Patent Agency Ranking
公开(公告)号：KR1020040020662A
公开(公告)日：2004-03-09
申请号：KR1020020052321
申请日：2002-08-31
Applicant: 한국과학기술연구원
IPC: H01L29/82
Abstract: PURPOSE: A method for fabricating a magnetic sensor using an exchange bias type spin valve having a full-bridge characteristic is provided to enhance the reliability and the stability by controlling resistance variations of four resistors to obtain the full-bridge characteristic. CONSTITUTION: The first spin valve layer is formed on a predetermined region for forming resistor elements of R1 and R3 to obtain the same spinning direction on a flat substrate. The first fine pattern is formed by performing a mask pattern process and a dry-etch process for the first spin valve layer. The second spin valve layer is formed on a predetermined region for forming resistor elements of R2 and R4 to obtain the opposite spinning direction to the predetermined region for forming resistor elements of R1 and R3. The second fine pattern is formed by performing a mask pattern process and a dry-etch process for the second spin valve layer. A contact wiring process is performed to form a bridge circuit including the resistor elements of R1, R2, R3,and R4.
Abstract translation: 目的：提供一种使用具有全桥特性的交换偏压型自旋阀制造磁传感器的方法，通过控制四个电阻的电阻变化来提高可靠性和稳定性，以获得全桥特性。 构成：第一自旋阀层形成在用于形成R1和R3的电阻元件的预定区域上，以在平坦基板上获得相同的旋转方向。 第一精细图案通过对第一自旋阀层进行掩模图案处理和干蚀刻工艺而形成。 第二自旋阀层形成在用于形成R2和R4的电阻元件的预定区域上，以获得与用于形成R1和R3的电阻元件的预定区域相反的纺丝方向。 通过对第二自旋阀层进行掩模图案处理和干法蚀刻工艺来形成第二精细图案。 执行接触布线处理以形成包括R1，R2，R3和R4的电阻元件的桥接电路。
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公开(公告)号：KR1020030032533A
公开(公告)日：2003-04-26
申请号：KR1020010064353
申请日：2001-10-18
Applicant: 한국과학기술연구원
IPC: H01L43/02
Abstract: PURPOSE: A method for fabricating a magnetoresistive thin film of a magnetoresistive spin valve by using a difference of coercive force is provided to form a spin valve structure that expresses high magnetoresistivity and high magnetic sensitivity in a low magnetic field, by controlling the spin of a CoFe layer and a NiFe layer while using a coercive force. CONSTITUTION: The CoFe layer is formed as the first ferromagnetic layer by a thickness of 20-100 angstrom in a condition that sputtering power is 20-100 watt and the partial pressure of Ar is 1-10 milliTorr so that the CoFe layer has high coercive force. The NiFe layer is formed as the second ferromagnetic layer by a thickness of 20-100 angstrom in a condition that sputtering power is 30-100 watt and the partial pressure of Ar is 1-15 milliTorr so that the NiFe layer has low coercive force.
Abstract translation: 目的：提供通过使用矫顽力差来制造磁阻自旋阀的磁阻薄膜的方法，以形成在低磁场中表现出高磁阻和高磁敏感的自旋阀结构，通过控制旋转 CoFe层和NiFe层，同时使用矫顽力。 构成：在溅射功率为20-100瓦且Ar的分压为1-10毫托的条件下，CoFe层形成为第一铁磁层的厚度为20-100埃，使得CoFe层具有高的矫顽力 力。 在溅射功率为30-100瓦，Ar分压为1-15毫乇的条件下，NiFe层形成为第二铁磁层，厚度为20-100埃，NiFe层的矫顽力低。
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公开(公告)号：KR1020030029756A
公开(公告)日：2003-04-16
申请号：KR1020010062456
申请日：2001-10-10
Applicant: 한국과학기술연구원
IPC: G11B5/39
Abstract: PURPOSE: A magnetoresistive thin film of a superior thermal characteristics in a dual spin valve and a method for manufacturing the same are provided to insert a proper oxide layer to a fixed layer for blocking the diffusion of Mn generated in an antiferromagnetic layer with respect to other layers, thereby improving the thermal characteristics. By forming the oxide layer uniformly by heat treatment, a magnetoresistive rate is increased. CONSTITUTION: In a method for fabricating a magnetoresistive thin film of a superior thermal characteristics in a dual spin valve, the middle portions of magnetic layers positioned between an antiferromagnetic layer and a nonmagnetic layer and contacting the antiferromagnetic layers are oxidized at a proper condition, and magnetic layers are deposited again. The end product is subject to the heat treatment in the vacuum state applied with magnetic fields.
Abstract translation: 目的：提供双自旋阀中具有优异热特性的磁阻薄膜及其制造方法，以将适当的氧化物层插入固定层，以阻止相对于其他反铁磁层产生的Mn的扩散 从而改善了热特性。 通过热处理来均匀地形成氧化物层，磁阻率提高。 构成：在双自旋阀中制造具有优异热特性的磁阻薄膜的方法中，位于反铁磁层与非磁性层之间并接触反铁磁层的磁性层的中间部分在适当的条件下被氧化，并且 再次沉积磁性层。 最终产品在施加磁场的真空状态下进行热处理。
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公开(公告)号：KR1019950009884B1
公开(公告)日：1995-09-01
申请号：KR1019930005781
申请日：1993-04-07
Applicant: 한국과학기술연구원
IPC: H01F1/14
Abstract: The method comprises the steps of preparing alloy consisting of iron 78 to 85 atom percent, Hf 6 to 9 atom percent, and B 9 to 13 atom percent; cooling a solution of the alloy; heating solution; and again cooling the solution.
Abstract translation: 该方法包括以下步骤：制备由钴组成的合金78〜85原子％，Hf 6〜9原子％，B 9〜13原子％ 冷却合金溶液; 加热溶液; 并再次冷却溶液。
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