公开(公告)号：KR101450093B1

公开(公告)日：2014-10-15

申请号：KR1020130125975

申请日：2013-10-22

Applicant: 한국과학기술연구원

Inventor： 백승협 ,  김진상 ,  강종윤 ,  최지원 ,  정진관 ,  윤석진 ,  김성근

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1666

Abstract: The present invention relates to a resistance random access memory device with a hetero-junction oxide film structure which is capable of using two-dimensional electron gas generated from a hetero-junction oxide interface as a low electrode of the resistance random access memory device by applying the hetero-junction oxide film structure, and of maximizing Ion/Ioff by utilizing the depletion property of two-dimensional electron gas, and a method of fabricating the same. A resistance random access memory device with a hetero-junction oxide film structure according to the present invention includes an oxide substrate; an oxide thin film layer provided on the oxide substrate and including a material, a kind of which is different from that of the oxide substrate; and a two-dimensional electron gas layer formed on the oxide substrate and the oxide thin film by an upper electrode provided on the oxide thin film layer and the hetero-junction of the oxide substrate and the oxide thin layer.

Abstract translation: 本发明涉及具有异质结氧化物膜结构的电阻随机存取存储器件，其能够使用由异质结氧化物界面产生的二维电子气体作为电阻随机存取存储器件的低电极， 异相结合氧化物膜结构以及通过利用二维电子气的耗尽特性使Ion / Ioff最大化的方法及其制造方法。 根据本发明的具有异质结氧化物膜结构的电阻随机存取存储器件包括氧化物衬底; 氧化物薄膜层，其设置在所述氧化物基板上并且包括与所述氧化物基板不同的材料; 以及通过设置在氧化物薄膜层上的上电极和氧化物衬底和氧化物薄层的异质结在氧化物衬底和氧化物薄膜上形成的二维电子气层。