公开(公告)号：KR101323218B1

公开(公告)日：2013-10-30

申请号：KR1020120081674

申请日：2012-07-26

Applicant: 한국과학기술연구원

Inventor： 하승규 ,  김수연 ,  한일기 ,  송진동 ,  최원준

IPC: H01L21/20

CPC classification number: H01L21/02104 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/00 ,  H01L21/02546 ,  H01L21/02601 ,  H01L21/02631 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/7613 ,  Y10S977/84

Abstract: PURPOSE: A method for manufacturing a nanostructure using a sacrificial etching mask is provided to prevent damage to a sample by not using an E-beam lithography apparatus. CONSTITUTION: A first semiconductor compound layer (2) and a semiconductor quantum structure layer (3) are formed on a substrate. A second semiconductor compound layer (4) and a semiconductor quantum dot layer are formed on the substrate. A thermal process is performed on the semiconductor quantum dot layer. The quantum dots of the semiconductor quantum dot layer agglomerate together due to the thermal process. An etching process is performed by using the agglomerate quantum dots as a mask.

Abstract translation: 目的：提供使用牺牲蚀刻掩模制造纳米结构的方法，以通过不使用电子束光刻设备来防止样品损坏。 构成：在基板上形成第一半导体化合物层（2）和半导体量子结构层（3）。 在基板上形成第二半导体化合物层（4）和半导体量子点层。 对半导体量子点层进行热处理。 由于热处理，半导体量子点层的量子点聚集在一起。 通过使用附聚量子点作为掩模来进行蚀刻处理。