公开(公告)号：KR100586308B1

公开(公告)日：2006-06-08

申请号：KR1020050031339

申请日：2005-04-15

Applicant: 한국과학기술원

Inventor： 강상구 ,  황치호 ,  이용수 ,  이희철

IPC: G01J5/02 ,  H01L31/09

公开(公告)号：KR100411733B1

公开(公告)日：2003-12-18

申请号：KR1020020015677

申请日：2002-03-22

Applicant: 한국과학기술원

Inventor： 김병혁 ,  강상구 ,  이희철

IPC: H04N5/33

Abstract: PURPOSE: A smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels is provided to compensate the background current after storing the background current of an infrared sensing element to simultaneously suppress the background current and compensate the ununiformity by additionally incorporating an ADC/DAC and a memory for preventing the error caused by the junction leakage current. CONSTITUTION: In a smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels, a gate of a first PMOSFET(Mskim) and a drain of a second PMOSFET(Mmem) are connected to a source of a third PMOSFET(Msel) to store a gate voltage of the first PMOSFET. The third PMOSFET has a gate of the third PMOSFET connected to Φmem, and a drain connected to an ADC/DAC via a BUSref. The ADC/DAC is connected to a memory(latch) by a BUSmem, so that a background current value stored to a current copier cell is digitalized and stored, and the gate voltage of the first PMOSFET is periodically reset.

Abstract translation: 目的：提供一种用于抑制背景电流，补偿不均匀性和恢复坏像素的智能信号获得电路，用于在存储红外感测元件的背景电流之后补偿背景电流，以同时抑制背景电流并通过附加地补偿不均匀性 一个ADC / DAC和一个存储器，用于防止结漏电流引起的误差。 本发明公开了一种用于抑制背景电流，补偿不均匀性和恢复坏像素的智能信号获得电路，第一PMOSFET（Mskim）的栅极和第二PMOSFET（Mmem）的漏极连接到第三PMOSFET （Msel）以存储第一PMOSFET的栅极电压。 第三PMOSFET的第三PMOSFET的栅极连接到＆amp;Φmem，并且漏极经由BUSref连接到ADC / DAC。 ADC / DAC通过BUSmem连接到存储器（锁存器），使得存储到当前复制器单元的背景电流值被数字化并存储，并且第一PMOSFET的栅极电压被周期性地复位。

公开(公告)号：KR1020030076034A

公开(公告)日：2003-09-26

申请号：KR1020020015677

申请日：2002-03-22

Applicant: 한국과학기술원

Inventor： 김병혁 ,  강상구 ,  이희철

IPC: H04N5/33

Abstract: PURPOSE: A smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels is provided to compensate the background current after storing the background current of an infrared sensing element to simultaneously suppress the background current and compensate the ununiformity by additionally incorporating an ADC/DAC and a memory for preventing the error caused by the junction leakage current. CONSTITUTION: In a smart signal obtaining circuit for suppressing a background current, compensating ununiformity, and recovering bad pixels, a gate of a first PMOSFET(Mskim) and a drain of a second PMOSFET(Mmem) are connected to a source of a third PMOSFET(Msel) to store a gate voltage of the first PMOSFET. The third PMOSFET has a gate of the third PMOSFET connected to Φmem, and a drain connected to an ADC/DAC via a BUSref. The ADC/DAC is connected to a memory(latch) by a BUSmem, so that a background current value stored to a current copier cell is digitalized and stored, and the gate voltage of the first PMOSFET is periodically reset.

Abstract translation: 目的：提供一种用于抑制背景电流，补偿不均匀性和恢复不良像素的智能信号获取电路，用于在存储红外感应元件的背景电流之后补偿背景电流，以同时抑制背景电流，并通过额外结合来补偿不均匀性 ADC / DAC和用于防止由结漏电流引起的误差的存储器。 构成：在用于抑制背景电流，补偿不均匀性和恢复不良像素的智能信号获取电路中，第一PMOSFET（Mskim）的栅极和第二PMOSFET（Mmem）的漏极连接到第三PMOSFET的源极 （Msel）来存储第一PMOSFET的栅极电压。 第三PMOSFET具有连接到Φmem的第三PMOSFET的栅极，漏极经由BUSref连接到ADC / DAC。 ADC / DAC通过BUSmem连接到存储器（锁存器），使得存储到当前复印机单元的背景电流值被数字化并存储，并且第一PMOSFET的栅极电压被周期性地复位。