公开(公告)号：KR100746910B1

公开(公告)日：2007-08-07

申请号：KR1020060043044

申请日：2006-05-12

Applicant: 한국과학기술원

Inventor： 김영수 ,  유중재 ,  오재섭

IPC: H01L21/3065

Abstract: A plasma etching apparatus and a plasma etching method are provided to enhance a surface roughness of a wafer, to prevent the generation of failure in an etching process, to improve the efficiency of the etching process, and to control variously the angle of a wafer profile. A plasma etching apparatus includes a chamber(210) for performing an etching process on a wafer(200), a gas flow unit, an upper electrode unit, and a lower electrode unit. The gas flow unit(220) is used for flowing a mixed gas of SF6 and O2 into the chamber. At this time, the flow rate of O2 is 0.8 to 1.4 times larger than that of the SF6. The upper electrode unit(230) is applied with an RF power for changing gas into plasma. The lower electrode unit(250) is applied with a bias voltage for inducing the plasma toward the wafer.

Abstract translation: 提供等离子体蚀刻装置和等离子体蚀刻方法以增强晶片的表面粗糙度，防止在蚀刻过程中产生故障，提高蚀刻过程的效率，并且各种方式控制晶片轮廓的角度 。 等离子体蚀刻设备包括用于在晶片（200）上执行蚀刻工艺的腔室（210），气体流动单元，上电极单元和下电极单元。 气流单元（220）用于使SF6和O2的混合气体流入腔室。 此时，O2的流量比SF6的流量大0.8〜1.4倍。 上电极单元（230）被施加用于将气体转变为等离子体的RF功率。 下电极单元（250）被施加用于向晶片引发等离子体的偏压。