公开(公告)号：KR100426956B1

公开(公告)日：2004-04-17

申请号：KR1020010044308

申请日：2001-07-23

Applicant: 한국과학기술원

Inventor： 임영수 ,  정종석 ,  이정용 ,  김홍승 ,  문대원

IPC: H01L21/20

Abstract: PURPOSE: A method for forming an oxide layer of a silicon-germanium epitaxial layer is provided to form the oxide layer without a defect by performing an oxidation process and a thermal process for an SiGe/Si hetero-junction structure. CONSTITUTION: An SiGe/Si hetero-junction layer is oxidized under temperature of 900 degrees centigrade during 15 minutes. The SiGe/Si hetero-junction layer is formed with an SiGe epitaxial layer having ununiform density of Ge and an Si layer(3). A thermal process for the SiGe/Si hetero-junction layer is performed to restrain the stack of Ge between an oxide layer(1) and the SiGe epitaxial layer after the oxidation process for the SiGe/Si hetero-junction layer is performed. In the SiGe epitaxial layer, the density of Ge is less than 50 percent.

Abstract translation: 目的：通过对SiGe / Si异质结结构进行氧化处理和热处理，提供形成硅锗外延层的氧化物层的方法以形成没有缺陷的氧化物层。 构成：SiGe / Si异质结层在900摄氏度的温度下氧化15分钟。 SiGe / Si异质结层由具有不均匀Ge浓度的SiGe外延层和Si层（3）形成。 在SiGe / Si异质结层的氧化工艺被执行之后，执行用于SiGe / Si异质结层的热处理以限制氧化物层（1）与SiGe外延层之间的Ge堆叠。 在SiGe外延层中，Ge的密度小于50％。

公开(公告)号：KR1020030009730A

公开(公告)日：2003-02-05

申请号：KR1020010044308

申请日：2001-07-23

Applicant: 한국과학기술원

Inventor： 임영수 ,  정종석 ,  이정용 ,  김홍승 ,  문대원

IPC: H01L21/20

Abstract: PURPOSE: A method for forming an oxide layer of a silicon-germanium epitaxial layer is provided to form the oxide layer without a defect by performing an oxidation process and a thermal process for an SiGe/Si hetero-junction structure. CONSTITUTION: An SiGe/Si hetero-junction layer is oxidized under temperature of 900 degrees centigrade during 15 minutes. The SiGe/Si hetero-junction layer is formed with an SiGe epitaxial layer having ununiform density of Ge and an Si layer(3). A thermal process for the SiGe/Si hetero-junction layer is performed to restrain the stack of Ge between an oxide layer(1) and the SiGe epitaxial layer after the oxidation process for the SiGe/Si hetero-junction layer is performed. In the SiGe epitaxial layer, the density of Ge is less than 50 percent.

Abstract translation: 目的：提供一种形成硅 - 锗外延层的氧化物层的方法，通过对SiGe / Si异质结结构进行氧化处理和热处理，形成氧化层而没有缺陷。 构成：SiGe / Si异质结层在900摄氏度的温度下在15分钟内被氧化。 SiGe / Si异质结层由具有不均匀密度的Ge和Si层（3）的SiGe外延层形成。 进行SiGe / Si异质结层的热处理，以进行SiGe / Si异质结层的氧化处理后，抑制氧化物层（1）与SiGe外延层之间的Ge堆叠。 在SiGe外延层中，Ge的密度小于50％。