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公开(公告)号：KR101372317B1
公开(公告)日：2014-03-12
申请号：KR1020120132796
申请日：2012-11-22
Applicant: 한국과학기술원
Abstract: Carbon nanostructures according to the present invention have metal ClNmOn mixed in a 5-6-5-6 pattern at the side walls of a hexagonal lattice structure under the following conditions: l+m+n=4, but l≠4, m≠4, n≠4
Abstract translation: 根据本发明的碳纳米结构在六边形晶格结构的侧壁上以5-6-5-6图案混合的金属ClNmOn在以下条件下：l + m + n = 4，但l≠4，m≠ 4，n≠4
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Patent Agency Ranking
公开(公告)号：KR101703039B1
公开(公告)日：2017-02-06
申请号：KR1020150135944
申请日：2015-09-24
IPC: H01L31/0368 , H01L31/18 , H01L31/04 , H01L31/0236
CPC classification number: Y02E10/50
Abstract: 본발명은초격자구조의실리콘결정및 이를포함하는전자소자에관한것으로, 적어도하나이상의제1구조층과단일의제2구조층이교번적으로적층되어있는초격자(superlattice) 구조를가지되, 상기제1구조층은다이아몬드구조의실리콘층이고, 상기제2구조층은자이와츠체인(Seiwatz Chain) 구조의실리콘층인것을특징으로것을특징으로한다.
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公开(公告)号：KR1020040080184A
公开(公告)日：2004-09-18
申请号：KR1020030015072
申请日：2003-03-11
Applicant: 한국과학기술원
Abstract: PURPOSE: A microscope is provided to allow for operation of spin-polarized scanning tunneling microscope under a wide variety of environments by physically and chemically stabilizing carbon nanotubes. CONSTITUTION: A microscope comprises carbon nanotubes used as a tip of a magnetic probe for probing magnetic characteristics of a specimen. The carbon nanotubes has tops with zigzag edges. The tips of the carbon nanotubes are formed by cutting intermediate portions of carbon nanotubes having a chiral index of (n,0).
Abstract translation: 目的：提供显微镜以允许通过物理和化学稳定碳纳米管在各种环境下自旋极化扫描隧道显微镜的操作。 构成：显微镜包括用作探测样品的磁特性的磁性探头的尖端的碳纳米管。 碳纳米管具有曲折边缘的顶部。 通过切割手性指数为（n，0）的碳纳米管的中间部分来形成碳纳米管的尖端。
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公开(公告)号：KR1020140059512A
公开(公告)日：2014-05-16
申请号：KR1020120126048
申请日：2012-11-08
Applicant: 엘지이노텍 주식회사 , 한국과학기술원
CPC classification number: H01L33/14 , H01L33/025 , H01L33/32
Abstract: A light emitting device according to an embodiment of the present invention includes a substrate; and a light emitting structure which is arranged on the substrate and includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer. The second conductive semiconductor layer includes a doping layer doped with a second conductive dopant and a carrier generating layer which is in contact with the doping layer and generates a second conductive carrier.
Abstract translation: 根据本发明实施例的发光器件包括：衬底; 以及发光结构，其布置在所述基板上并且包括布置在所述第一导电半导体层和所述第二导电半导体层之间的第一导电半导体层，第二导电半导体层和有源层。 第二导电半导体层包括掺杂有第二导电掺杂剂的掺杂层和与掺杂层接触并产生第二导电载体的载流子产生层。
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公开(公告)号：KR100498751B1
公开(公告)日：2005-07-01
申请号：KR1020030015072
申请日：2003-03-11
Applicant: 한국과학기술원
Abstract: 탄소 나노튜브 프로브를 이용한 자기력 현미경 장치에 관해 개시하고 있다. 본 발명의 자기력 현미경 장치는, 시료의 자성특성을 조사하기 위하여 자성 프로브의 팁으로서 지그재그형 에지인 탄소 나노튜브를 이용하는 것을 특징으로 한다. 본 발명에 의하면, 시료의 원자 및 나노미터 크기의 수준에서 스핀 혹은 자성 분포를 측정할 수 있다.
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公开(公告)号：KR1020160087060A
公开(公告)日：2016-07-21
申请号：KR1020150004474
申请日：2015-01-12
Abstract: 본발명은실리콘결정및 이를포함하는전자소자에관한것으로, 직접밴드갭(direct bandgap) 특성, 준직접밴드갭(quasi direct bandgap) 특성또는광흡수능력이탁월한간접밴드갭(indirect bandgap) 특성을가지는것을특징으로한다.
Abstract translation: 硅晶体和包含硅晶体的电子元件技术领域本发明涉及硅晶体和包括硅晶体的电子元件。 本发明的目的是提供具有优异的光吸收特性或发光特性的硅晶体和包含硅晶体的电子元件。 根据本发明的示例性实施例的硅晶体的特征在于其具有直接带隙特性，准直接带隙特性或具有优异的光吸收能力的间接带隙特性。 根据本发明的一个示例性实施例的电子元件包括作为光吸收材料或发光材料的直接带隙特性的硅晶体。 根据本发明的其它示例性实施例的电子元件包括准直接带隙特性的硅晶体或作为光吸收材料的间接带隙特性的硅晶体。
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