公开(公告)号：KR1020140096868A

公开(公告)日：2014-08-06

申请号：KR1020130010009

申请日：2013-01-29

Applicant: 한국과학기술원

Inventor： 박정영 ,  권상구 ,  서형탁 ,  전기준

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/04 ,  B82Y10/00 ,  H01L45/085 ,  H01L45/146

Abstract: The present invention relates to a resistance random access memory device and a method for manufacturing the same. More particularly, the present invention provides a resistance random access memory device which includes a lower electrode; an oxide layer which is located on the lower electrode; and an upper electrode which is located on the oxide layer and is formed with a graphene layer, and a method for manufacturing the same using a self alignment process. A resistance random access memory device and a method for manufacturing the same according to the present invention, have an excellent resistance switching property by using graphene and are used in the manufacture of a nano-scaled memory device due to a self alignment process.

Abstract translation: 电阻随机存取存储器件及其制造方法技术领域本发明涉及一种电阻随机存取存储器件及其制造方法。 更具体地，本发明提供一种电阻随机存取存储器件，其包括下电极; 位于下电极上的氧化物层; 以及位于氧化物层上并形成有石墨烯层的上部电极及其制造方法。 根据本发明的电阻随机存取存储器件及其制造方法通过使用石墨烯具有优异的电阻切换特性，并且由于自对准工艺而用于制造纳米级存储器件。