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1.发明授权ＩｎＰ 양자점 제조를 위한 전구체 Ｐ(ＳｉＭｅ2-ｔｅｒｔ-Ｂｕ)3, 이의 제조방법 및 이를 포함하는 ＩｎＰ 양자점과 이의 제조방법 有权前置式P（SIME2-TERT-BU）3，用于INP量子点，其准备方法，包含P（SIME2-TERT-BU）3的INP量子点及其制备方法
公开(公告)号：KR101043311B1
公开(公告)日：2011-06-22
申请号：KR1020100105960
申请日：2010-10-28
Applicant: 한국기계연구원
CPC classification number: C07F19/00 , C01B25/087 , C01G9/08 , C01P2004/80 , C09K11/56 , C09K11/70
Abstract: PURPOSE: A method for preparing precursor P(SiMe_2-tert-Bu)_3 for producing InP quantum dot is provided to form InP quantum dot having strong binding power and to ensure excellent luminous efficiency. CONSTITUTION: A method for preparing P(SiMe_2-tert-Bu)_3 comprises: a step of preparing Na/K alloy; a step of adding dimethoxyethane and red phosphorus to the Na/K alloy and heating; a step of adding tertbutyldimethylchlorosilane dissolved by dimethoxyethane into the heated solution and heating; a step of extracting P(SiMe_2-tert-Bu)_3 from the mixture solution. An InP quantum dot contains the precursor P(SiMe_2-tert-Bu)_3.
Abstract translation: 目的：制备用于制备InP量子点的前体P（SiMe_2-tert-Bu）_3的方法，以形成具有强结合力的InP量子点并确保优异的发光效率。 构成：制备P（SiMe_2-tert-Bu）_3的方法包括：制备Na / K合金的步骤; 向Na / K合金中加入二甲氧基乙烷和红磷并加热的步骤; 将由二甲氧基乙烷溶解的叔丁基二甲基氯硅烷加入到加热溶液中并加热的步骤; 从混合溶液中提取P（SiMe_2-tert-Bu）_3的步骤。 InP量子点包含前体P（SiMe_2-tert-Bu）_3。
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