公开(公告)号：KR1020110091361A

公开(公告)日：2011-08-11

申请号：KR1020100011166

申请日：2010-02-05

Applicant: 한국기계연구원

Inventor： 정소희 ,  한창수 ,  정소명 ,  장원석 ,  김준동

IPC: C09K11/02 ,  C09K11/70

Abstract: PURPOSE: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell is provided to improve size uniformity of particles, productivity, and coating uniformity of ZnS shell and to reduce the reaction time. CONSTITUTION: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell comprises (S10) forming an indium phosphide core and (S20) forming a Group II-VI compound semiconductor shell on the surface of the indium phosphide core using a monomolecular precursor which includes Group II elements and includes Group VI elements at the same time and enables the formation the Group II-VI compound by being degraded in the heating to the predetermined temperature or more.

Abstract translation: 目的：提供一种制备涂有II-VI族化合物壳的磷化铟量子点的方法，以改善粒子的尺寸均匀性，生产率和ZnS壳的涂层均匀性，并减少反应时间。 构成：用于制造涂覆有II-VI族化合物壳的铟磷化物量子点的方法包括：（S10）形成磷化铟核，和（S20）在磷化铟芯的表面上形成II-VI族化合物半导体外壳，使用 包括II族元素并且同时包含VI族元素的单分子前体，并且能够通过在加热中降解至预定温度或更高而形成II-VI族化合物。