公开(公告)号：KR1020130007188A

公开(公告)日：2013-01-18

申请号：KR1020110064201

申请日：2011-06-30

Applicant: 한국산업기술대학교산학협력단

Inventor： 송용원 ,  이승인 ,  이유리 ,  박상진 ,  강종성 ,  박태은 ,  이정웅

IPC: C23C14/34 ,  C23C14/14 ,  H01L31/18

CPC classification number: Y02P70/521

Abstract: PURPOSE: A method for manufacturing CIGS thin films is provided to simplify a manufacturing process because a separate process or device for manufacture stability is not necessary by using selenium elements instead of hydrogen selenide(H2Se) in a selenization annealing process. CONSTITUTION: A method for manufacturing CIGS thin films includes as follows; a step for forming a CIG precursor on a substrate by sputtering an alloy target including copper, indium, and gallium on the top of the substrate(S10); a step for forming copper-selenium compound, indium-selenium compound, and gallium-selenium compound by primarily annealing the CIG precursor in an selenium atmosphere(S20); a step for forming a CIGS thin film on the top of the substrate by secondarily annealing the copper-selenium compound, the indium-selenium compound, and the gallium-selenium compound in the selenium atmosphere(S30). [Reference numerals] (AA) Start; (BB) End; (S10) Sputtering an alloy target including copper, indium, and gallium on the top of a substrate; (S20) Primarily heat-treating a CIG precursor in a selenium atmosphere; (S30) Secondarily heat-treating a copper-selenium compound, an indium-selenium compound, and a gallium-selenium compound in a selenium atmosphere

Abstract translation: 目的：提供一种制造CIGS薄膜的方法，以简化制造过程，因为在硒化退火工艺中，通过使用硒元素代替硒化氢（H2Se），不需要用于制造稳定性的单独工艺或器件。 构成：制造CIGS薄膜的方法如下： 通过在基板的顶部溅射包含铜，铟和镓的合金靶，在基板上形成CIG前体的步骤（S10）; 通过在硒气氛中主要对CIG前体进行退火来形成铜 - 硒化合物，铟 - 硒化合物和镓 - 硒化合物的步骤（S20）; 通过在硒气氛中二次退火铜 - 硒化合物，铟 - 硒化合物和镓 - 硒化合物，在衬底的顶部上形成CIGS薄膜的步骤（S30）。 （附图标记）（AA）开始; （BB）结束; （S10）在基板的顶部溅射包含铜，铟和镓的合金靶; （S20）主要在硒气氛中热处理CIG前体; （S30）在硒气氛中二次热处理硒 - 硒化合物，铟 - 硒化合物和镓 - 硒化合物