公开(公告)号：KR1020110080519A

公开(公告)日：2011-07-13

申请号：KR1020100000783

申请日：2010-01-06

Applicant: 한국세라믹기술원

Inventor： 전명표 ,  박인호 ,  조정호 ,  남중희

IPC: C30B29/38 ,  H01L33/64

CPC classification number: H01L33/641 ,  H01L33/005 ,  H01L33/02 ,  H01L2933/0033

Abstract: PURPOSE: A light emitting diode substrate and a manufacturing method thereof are provided to quickly emit heat generated from a light emitting diode device, thereby increasing an effective usage rate of a light emitting diode. CONSTITUTION: A printed circuit surface is formed on a substrate. A nitride aluminium precursor is generated by mixing a liquid organic nitrile compound with a liquid aluminium compound. The generated nitride aluminium precursor is heated at a temperature which is higher than 50°C under an inert gas to generate a nitride aluminium polymer(S200).

Abstract translation: 目的：提供一种发光二极管基板及其制造方法，以快速发出由发光二极管装置产生的热量，从而提高发光二极管的有效使用率。 构成：在基板上形成印刷电路表面。 通过将液体有机腈化合物与液体铝化合物混合来产生氮化铝铝前体。 所产生的氮化铝铝前体在惰性气体下在高于50℃的温度下加热以产生氮化铝聚合物（S200）。