公开(公告)号：KR100419778B1

公开(公告)日：2004-02-21

申请号：KR1020010007749

申请日：2001-02-16

Applicant: 한국에너지기술연구원

Inventor： 우상국 ,  한인섭 ,  이기성 ,  서두원 ,  홍기석 ,  배강 ,  임광현 ,  임병훈

IPC: C04B35/573

Abstract: PURPOSE: A method for manufacturing silicon carbide-boron carbide composites by liquid phase reaction sintering is provided which can compensate strength/hardness reduction due to free silicone in silicon carbide-boron carbide composite produced by liquid phase reaction sintering. CONSTITUTION: The manufacturing method of silicon carbide-boron carbide composites by liquid phase reaction sintering includes the steps of (i) adding 5-40 wt.% of boron carbide(B4C) to an admixture comprising 80-95 wt.% silicon carbide and 5-20 wt.% carbon powder followed by mixing, wherein the silicon carbide is composed of coarse particle and fine particle in a ratio of 7:3, and the carbon powder is carbon black having mean particle size of less than 1μm; (ii) adding 1-2 wt.% of organic binder to the mixture obtained in the first step followed by granulating above mixture with a sieve having 50-100 mesh size; (iii) pressing the granulated mixture by uniaxial pressing at 300-500Kg/cm¬2; and (iv) sintering process. The sintering process is characterized in that above formed mixture is heated up to 600 deg.C at a temperature rising rate of 1 to 2 deg.C/min under decompressed atmosphere of 10¬-1 to 10¬-2 torr and then holding the temperature for 1 hour; sequentially it is heated to temperature ranges of 1,550 to 1,600°C at a temperature rising rate of 5 deg.C/min and then holding the temperature for a certain period of time; and finally it is heated up to 1,700°C.

Abstract translation: 目的：提供一种通过液相反应烧结制造碳化硅 - 碳化硼复合材料的方法，其可以补偿由液相反应烧结制备的碳化硅 - 碳化硼复合材料中由游离硅氧烷引起的强度/硬度降低。 构成：通过液相反应烧结的碳化硅 - 碳化硼复合材料的制造方法包括以下步骤：（i）将5-40重量％的碳化硼（B 4 C）加入到包含80-95重量％的碳化硅和 5-20重量％的碳粉，然后混合，其中碳化硅由粗颗粒和细颗粒以7:3的比例组成，碳粉是平均粒径小于1μm的炭黑; 米; （ii）将1-2重量％的有机粘合剂加入到第一步获得的混合物中，随后用50-100目尺寸的筛将上述混合物造粒; （iii）通过在300-500Kg / cm 2和2下单轴压制造粒的混合物; 和（iv）烧结过程。 该烧结过程的特征在于，在减压10〜10℃〜2乇的气氛中，将上述形成的混合物以1〜2℃/分钟的升温速度升温至600℃后， 温度1小时; 依次以5℃/分钟的升温速度将其加热至1550至1600℃的温度范围，然后保持该温度一段时间; 最后加热到1700℃。

公开(公告)号：KR1020020067257A

公开(公告)日：2002-08-22

申请号：KR1020010007749

申请日：2001-02-16

Applicant: 한국에너지기술연구원

Inventor： 우상국 ,  한인섭 ,  이기성 ,  서두원 ,  홍기석 ,  배강 ,  임광현 ,  임병훈

IPC: C04B35/573

CPC classification number: C04B35/573 ,  C04B35/563 ,  C04B35/62695 ,  C04B35/64 ,  C04B2235/3821 ,  C04B2235/3826

Abstract: PURPOSE: A method for manufacturing silicon carbide-boron carbide composites by liquid phase reaction sintering is provided which can compensate strength/hardness reduction due to free silicone in silicon carbide-boron carbide composite produced by liquid phase reaction sintering. CONSTITUTION: The manufacturing method of silicon carbide-boron carbide composites by liquid phase reaction sintering includes the steps of (i) adding 5-40 wt.% of boron carbide(B4C) to an admixture comprising 80-95 wt.% silicon carbide and 5-20 wt.% carbon powder followed by mixing, wherein the silicon carbide is composed of coarse particle and fine particle in a ratio of 7:3, and the carbon powder is carbon black having mean particle size of less than 1μm; (ii) adding 1-2 wt.% of organic binder to the mixture obtained in the first step followed by granulating above mixture with a sieve having 50-100 mesh size; (iii) pressing the granulated mixture by uniaxial pressing at 300-500Kg/cm¬2; and (iv) sintering process. The sintering process is characterized in that above formed mixture is heated up to 600 deg.C at a temperature rising rate of 1 to 2 deg.C/min under decompressed atmosphere of 10¬-1 to 10¬-2 torr and then holding the temperature for 1 hour; sequentially it is heated to temperature ranges of 1,550 to 1,600°C at a temperature rising rate of 5 deg.C/min and then holding the temperature for a certain period of time; and finally it is heated up to 1,700°C.

Abstract translation: 目的：提供一种通过液相反应烧结制造碳化硅 - 碳化硼复合材料的方法，其可以补偿由液相反应烧结制备的碳化硅 - 碳化硼复合材料中的游离硅氧烷的强度/硬度降低。 构成：通过液相反应烧结制造碳化硅 - 碳化硼复合材料的方法包括以下步骤：（i）将5-40重量％的碳化硼（B4C）加入到包含80-95重量％的碳化硅和 5-20重量％的碳粉末，然后混合，其中碳化硅由比例为7:3的粗颗粒和细颗粒组成，碳粉是平均粒度小于1μm的炭黑; （ii）在第一步骤中获得的混合物中加入1-2重量％的有机粘合剂，然后用具有50-100目尺寸的筛子将上述混合物造粒; （iii）以300-500Kg / cm 2的单轴压制压制造粒混合物; 和（iv）烧结工艺。 烧结过程的特征在于，将上述形成的混合物在10-1-10 -2托的减压气氛下以1至2℃/ min的升温速率加热至600℃，然后将 温度1小时; 依次加热至1550〜1600℃的温度范围，升温速度为5℃/分钟，然后保温一定时间; 最后加热到1700℃。