公开(公告)号：KR1020110133115A

公开(公告)日：2011-12-12

申请号：KR1020100052670

申请日：2010-06-04

Applicant: 한국전자통신연구원

Inventor： 우종창 ,  김관하

IPC: H01L21/66 ,  H01L27/115

CPC classification number: H01L45/04 ,  H01L21/28291 ,  H01L45/1233 ,  H01L45/141

Abstract: PURPOSE: A plasma damage measuring device is provided to use a pattern for inducing plasma charging and a measurement pattern, thereby reducing the costs for manufacturing a test wafer. CONSTITUTION: A test wafer(100) comprises a device isolation pattern(210). The device isolation pattern electrically isolates plasma damage measuring devices which are different from at least one plasma damage measuring device(200). Charges induced from plasma are accumulated in an antenna structure. A semiconductor device is connected to the lower part of the antenna structure. The electrical features of the semiconductor device are varied by the accumulated charges.

Abstract translation: 目的：提供等离子体损伤测量装置以使用用于诱导等离子体充电的图案和测量图案，从而降低制造测试晶片的成本。 构成：测试晶片（100）包括器件隔离图案（210）。 器件隔离图案电隔离不同于至少一个等离子体损伤测量装置（200）的等离子体损伤测量装置。 从等离子体引起的电荷累积在天线结构中。 半导体器件连接到天线结构的下部。 半导体器件的电气特征由累积电荷变化。

公开(公告)号：KR100835379B1

公开(公告)日：2008-06-04

申请号：KR1020060123992

申请日：2006-12-07

Applicant: 한국전자통신연구원

Inventor： 김관하 ,  노태문 ,  김종대 ,  김상기 ,  구진근

IPC: H01L21/02

Abstract: A chamber condition monitoring method using a quadrupole mass spectrometer is provided to reduce a manufacturing time by performing a seasoning process or monitoring a change of states. A measuring process is performed to measure dissociated ions or mass and energy distribution of reaction kinds of plasma, and density of radicals by using a quadrupole mass spectrometer. A producing process is performed to produce relative distribution of the dissociated ions, and an ionization ratio of the plasma by using the measured results. The ionization ratio of the plasma, the relative distribution and ratio of the dissociated ions, and the density of the radicals are with a normal state of a plasma apparatus(S340). A seasoning process for the process chamber is performed to change a produced value to a normal range when the determined result exceeds the normal range(S350-S380).

Abstract translation: 提供使用四极质谱仪的室状态监测方法，通过进行调味处理或监测状态的变化来减少制造时间。 使用四极质谱仪进行测量过程，以测量离子的离子或反应种类的质量和能量分布以及自由基的密度。 通过使用测定结果，进行离子化离子的相对分布和等离子体的离子化比的制造工序。 等离子体的离子化比例，离解离子的相对分布和比例以及自由基的密度与等离子体装置的正常状态（S340）相同。 当确定结果超过正常范围时，执行处理室的调味处理以将产生的值改变到正常范围（S350-S380）。