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公开(公告)号：KR1019900002964B1
公开(公告)日：1990-05-03
申请号：KR1019870004491
申请日：1987-05-08
Applicant: 한국전자통신연구원
IPC: G02B5/18
Abstract: A glass plate cleaned in chromic acid and isopropyl is deposited with chrome, and a positive photoresist is coated on the chrome layer with the thickness of 500 angstrom by a spin coater, and then baked in a oven for 30 minutes. The processed glass plate is exposured by a contact printer and etched by a chrome for 35 seconds, and then the photoresist on the chrome layer is removed. An oxide film is deposited again on the glass plate in the process of chemical vapor deposition (CVD) or low pressure CVD, and then a negative photoresist is coated, baked on the oxide film and etched by a waycoat stripper.
Abstract translation: 在铬酸和异丙基中清洗的玻璃板用铬沉积，通过旋转涂布机将正性光致抗蚀剂涂覆在厚度为500埃的铬层上，然后在烘箱中烘烤30分钟。 经处理的玻璃板由接触式打印机曝光并用铬蚀刻35秒，然后去除铬层上的光致抗蚀剂。 在化学气相沉积（CVD）或低压CVD的过程中，再次在玻璃板上沉积氧化膜，然后涂覆负性光致抗蚀剂，在氧化膜上烘烤并用路面涂层剥离剂蚀刻。
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