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公开(公告)号:KR1019920008041B1
公开(公告)日:1992-09-21
申请号:KR1019900007231
申请日:1990-05-21
Applicant: 한국전자통신연구원
IPC: H01L21/477
Abstract: The infrared heater is used for activating semi-conductor base plate and forming thin insulation membrane (oxidized silicon or nitrided silicon) during the process of manufacturing integrated circuit. The heater comprises a plurality of infrared lamps (1) equidistantly arranged, a pure gold reflection mirror (4) for increasing the heating efficiency, a contact type socket (3) supporting the infrared lamp (1), one cooling water line (8) formed within the reflection mirror (4), another cooling water line (12) formed within an inner wall (11) of the heater, and compressed air discharge holes (10) equidistantly perforated on the lower part of an air supply plate (9). The infrared heater provides a precise adjustment of a heating period and a maximum temperature.
Abstract translation: 在制造集成电路的过程中,红外加热器用于激活半导体基板和形成薄绝缘膜(氧化硅或氮化硅)。 加热器包括多个等距布置的红外灯(1),用于提高加热效率的纯金反射镜(4),支撑红外灯(1)的接触型插座(3),一个冷却水管线(8) 形成在反射镜(4)内的另一冷却水管线(12),以及形成在加热器的内壁(11)内的另一个冷却水管线(12)以及在供气板(9)的下部等距地穿孔的压缩空气排出孔 。 红外加热器可以精确调节加热周期和最高温度。
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