公开(公告)号：KR101749240B1

公开(公告)日：2017-06-21

申请号：KR1020100129841

申请日：2010-12-17

Applicant: 한국전자통신연구원

Inventor： 이준성 ,  윤용선

IPC: G02B5/04 ,  G01J1/04 ,  G01T1/20 ,  G01T1/24 ,  H01L31/0232 ,  G01J1/02 ,  H01L27/146

CPC classification number: H01L31/02327 ,  G01J1/0214 ,  G01J1/0407 ,  G01T1/2002 ,  G01T1/248 ,  H01L27/14627

Abstract: 본발명은복수의마이크로셀을가지는반도체포토멀티플라이어상부에형성되는광학구조체를제공한다. 이광학구조체는, 각마이크로셀의수광영역사이에존재하는비수광영역의상부에형성되고단면의형상이상부에비해하부가넓은구조를갖는제1 유전체, 및각 마이크로셀의수광영역의상부에형성되고단면의형상이상부에비해하부가좁은구조를갖는제2 유전체를포함하고, 제2 유전체의굴절률이상기제1 유전체의굴절률보다높은것을특징으로한다.

Abstract translation: 本发明提供了一种形成在具有多个微单元的半导体光倍增器上的光学结构。 形成在非受光区域存在于每个微小区的光接收区域之间，其横截面的形状与形成在所述第一电介质的光接收区域的上部的上底相比，具有mitgak微小区大的结构的顶部上Yigwanghak结构 横截面，并与下部的第二电介质的形状为比上部结构窄，并且其特征在于所述介电率比上述第一电介质基体的折射率的第二折射率。

公开(公告)号：KR101648023B1

公开(公告)日：2016-08-12

申请号：KR1020100131869

申请日：2010-12-21

Applicant: 한국전자통신연구원

Inventor： 이준성

IPC: H01L31/101 ,  H01L27/14

CPC classification number: H01L31/103 ,  H01L27/1446 ,  H01L27/1463

Abstract: 본발명은트렌치분리형실리콘포토멀티플라이어에관한것으로서, 트렌치격리구조를통해셀 고밀도화로인해불가항력적으로수반되는유효수광면적비의감소를줄여광 검출효율을높게유지함과동시에광도측정의동적영역을높일수 있으며, 셀사이에누설되는광자를차단함과동시에트렌치에소멸저항및 가드링의역할을동시에구현하여다기능화함으로써셀간이격거리를최소화하여소자의유효수광면적비를증가시키고성능을향상시킬수 있다.

公开(公告)号：KR1020130025797A

公开(公告)日：2013-03-12

申请号：KR1020120026726

申请日：2012-03-15

Applicant: 한국전자통신연구원

Inventor： 이준성 ,  윤용선

IPC: H01L31/09

CPC classification number: H01L31/10 ,  H01L31/107 ,  H01L31/18

Abstract: PURPOSE: A photo multiplier and a method for manufacturing the same are provided to maximize productivity by simplifying a process for manufacturing a silicon micro cell diode. CONSTITUTION: A mask film is formed on an active area(102) of a first conductive substrate. A first doping area(120) is formed by implanting a second conductive impurity to a substrate. An element isolation film is formed on an inactive area(104). A mask film is removed. A second doping area is formed by implanting the second conductive impurity in the first doping area.

Abstract translation: 目的：提供一种光电倍增器及其制造方法，以通过简化硅微单元二极管的制造工艺来最大限度地提高生产率。 构成：在第一导电基板的有源区（102）上形成掩模膜。 通过将第二导电杂质注入衬底形成第一掺杂区域（120）。 元件隔离膜形成在非活性区域（104）上。 去除掩模膜。 通过在第一掺杂区域中注入第二导电杂质来形成第二掺杂区域。

公开(公告)号：KR1020120063323A

公开(公告)日：2012-06-15

申请号：KR1020100124443

申请日：2010-12-07

Applicant: 한국전자통신연구원

Inventor： 이준성 ,  윤용선

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/103 ,  H01L31/107

CPC classification number: H01L31/103 ,  H01L27/1461 ,  H01L27/14683 ,  H01L31/107 ,  H01L31/0216 ,  H01L31/022466

Abstract: PURPOSE: A silicon photomultiplier and a manufacturing method thereof are provided to improve an aperture ratio of a micro cell by changing a structure of a quench resistor which is directly connected to a photo diode of the micro cell. CONSTITUTION: A first conductive buried layer(110) is formed on the lower side of a first conductive semiconductor layer(122). A quench resistor(142) is formed on the first conductive semiconductor layer. A transparent insulator(165) is formed on the first conductive semiconductor layer to expose the quench resistor. A second conductive type top doping layer(132) in contact with the first conductive semiconductor is formed under the quench resistor. A transparent electrode(170) is formed on the upper side of the quench resistor and the transparent insulator.

Abstract translation: 目的：提供一种硅光电倍增管及其制造方法，通过改变与微电池的光电二极管直接连接的骤冷电阻器的结构来提高微电池的开口率。 构成：第一导电埋层（110）形成在第一导电半导体层（122）的下侧。 在第一导电半导体层上形成骤冷电阻器（142）。 在第一导电半导体层上形成透明绝缘体（165）以暴露骤冷电阻。 在骤冷电阻器下方形成与第一导电半导体接触的第二导电型顶部掺杂层（132）。 在骤冷电阻器和透明绝缘体的上侧形成透明电极（170）。

公开(公告)号：KR101768704B1

公开(公告)日：2017-08-17

申请号：KR1020120026726

申请日：2012-03-15

Applicant: 한국전자통신연구원

Inventor： 이준성 ,  윤용선

IPC: H01L31/09

Abstract: 본발명은포토멀티플라이어및 그의제조방법을개시한다. 그의제조방법은, 제 1 도전형으로도핑된기판의활성영역상에마스크막을형성하는단계와, 상기제 1 도전형과반대되는제 2 도전형불순물을상기기판에이온주입하여상기마스크막아래의상기활성영역과, 상기마스크막으로부터노출된비 활성영역내에제 1 도핑영역을형성하는단계와, 상기비 활성영역상에소자분리막을형성하는단계와, 상기마스크막을제거하는단계와, 상기제 1 도핑영역보다높은농도의상기제 2 도전형불순물을상기활성영역내의상기제 1 도핑영역상부에이온주입하여상기제 1 도핑영역보다얕은제 2 도핑영역을형성하는단계를포함한다.

公开(公告)号：KR101711087B1

公开(公告)日：2017-02-28

申请号：KR1020100124443

申请日：2010-12-07

Applicant: 한국전자통신연구원

Inventor： 이준성 ,  윤용선

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/103 ,  H01L31/107

CPC classification number: H01L31/103 ,  H01L27/1461 ,  H01L27/14683 ,  H01L31/107

Abstract: 실리콘포토멀티플라이어및 그제조방법이제공된다. 실리콘포토멀티플라이어는제 1 도전형반도체층, 제 1 도전형반도체층의아래에형성되며, 제 1 도전형반도체층보다불순물농도가높은제 1 도전형매몰층, 제 1 도전형반도체층상에서로이격되어형성된소멸저항들, 제 1 도전형반도체층상에형성되며, 소멸저항들을노출하는투명절연체, 소멸저항들아래에형성되어제 1 도전형반도체층과접하는제 2 도전형의상부도핑층들및 투명절연체및 소멸저항들의상면들을덮으며, 소멸저항들과전기적으로공통연결되는투명전극을포함한다.

公开(公告)号：KR1020120070348A

公开(公告)日：2012-06-29

申请号：KR1020100131869

申请日：2010-12-21

Applicant: 한국전자통신연구원

Inventor： 이준성

IPC: H01L31/101 ,  H01L27/14

CPC classification number: H01L31/103 ,  H01L27/1446 ,  H01L27/1463 ,  H01L31/101 ,  H01L27/14

Abstract: PURPOSE: A silicon photomultiplier of a trench isolation type is provided to maintain light detection efficiency by preventing a valid light receiving area ratio from decreasing. CONSTITUTION: Premature breakdown occurs by light excitation in a plurality of cell receiving parts(201) . A trench is formed between a plurality of cell receiving parts and divides the plurality of cells cell receiving parts. The trench includes trench resistance(203) and a trench dielectric layer(202). The trench resistance is filled with a semiconductor or a resistant. The trench dielectric layer constitutes a partition wall of the trench.

Abstract translation: 目的：提供沟槽隔离型硅光电倍增管，通过防止有效的光接收面积比降低来保持光检测效率。 构成：通过在多个电池接收部件（201）中的光激发而发生过早击穿。 在多个单元接收部之间形成沟槽，并分割多个单元电池接收部。 沟槽包括沟槽电阻（203）和沟槽电介质层（202）。 沟槽电阻填充有半导体或电阻。 沟槽电介质层构成沟槽的隔壁。

公开(公告)号：KR1020120068280A

公开(公告)日：2012-06-27

申请号：KR1020100129841

申请日：2010-12-17

Applicant: 한국전자통신연구원

Inventor： 이준성 ,  윤용선

IPC: G02B5/04 ,  G01J1/04 ,  G01T1/20 ,  G01T1/24 ,  H01L31/0232 ,  G01J1/02 ,  H01L27/146

CPC classification number: H01L31/02327 ,  G01J1/0214 ,  G01J1/0407 ,  G01T1/2002 ,  G01T1/248 ,  H01L27/14627 ,  G02B5/045

Abstract: PURPOSE: A top optical structure of a semiconductor photomultiplier and a manufacturing method thereof are provided to increase light receiving efficiency by inducing a part of light entered to a non-light receiving area of a device to a light receiving area. CONSTITUTION: A first dielectric is formed on the top of a non-light receiving area(203) existing between light-receiving regions(202) of each micro cell. The upper side of a cross section of the first dielectric is wider than the lower side of the cross section of the first dielectric. A second dielectric is formed on the top of the light-receiving region of each micro cell. The upper side of a cross section of the second dielectric is narrower than the lower side of the cross section of the second dielectric. A photo-resist(206) is a mask required for etching a low-refractive-index dielectric(205).

Abstract translation: 目的：提供半导体光电倍增管的顶部光学结构及其制造方法，以通过将一部分输入到装置的非光接收区域的光引入光接收区域来提高光接收效率。 构成：在存在于每个微电池的光接收区域（202）之间的非光接收区域（203）的顶部上形成第一电介质。 第一电介质的横截面的上侧比第一电介质的横截面的下侧宽。 在每个微电池的光接收区域的顶部上形成第二电介质。 第二电介质的横截面的上侧比第二电介质的横截面的下侧窄。 光刻胶（206）是蚀刻低折射率电介质（205）所需的掩模。