公开(公告)号：KR100679224B1

公开(公告)日：2007-02-05

申请号：KR1020050105260

申请日：2005-11-04

Applicant: 한국전자통신연구원

Inventor： 최철종 ,  김용진 ,  이희덕

IPC: H01L21/24 ,  H01L21/336

Abstract: A semiconductor device and its manufacturing method are provided to reduce a sheet resistance and to improve the performance and qualities of the semiconductor device itself by forming uniformly a silicide layer using a heat treatment on a predetermined stack structure composed of a first metal film, a second metal film, a third metal film and a nitride layer. A semiconductor layer containing silicon is formed on a substrate(101). A gate insulating layer(111) is formed on the semiconductor layer. A gate electrode(112) is formed on the gate insulating layer. Source/drain regions(115) are formed in the semiconductor layer. A first metal film is formed on the resultant structure. A second metal film is formed on the first metal film. A third metal film is formed on the second metal film. A nitride layer is formed on the third metal film. A silicide layer(131) is formed on the gate electrode and the source/drain regions by performing a heat treatment on the resultant structure.

Abstract translation: 本发明提供一种半导体装置及其制造方法，其通过在由第一金属膜，第二金属膜，第二金属膜和第二金属膜构成的规定的层叠结构体上均匀地形成硅化物层来降低薄层电阻，提高半导体装置本身的性能和品质， 金属膜，第三金属膜和氮化物层。 包含硅的半导体层形成在衬底（101）上。 栅绝缘层（111）形成在半导体层上。 栅极电极（112）形成在栅极绝缘层上。 源/漏区（115）形成在半导体层中。 在所得结构上形成第一金属膜。 在第一金属膜上形成第二金属膜。 在第二金属膜上形成第三金属膜。 在第三金属膜上形成氮化物层。 通过对所得结构进行热处理，在栅电极和源/漏区上形成硅化物层（131）。