公开(公告)号：KR100820182B1

公开(公告)日：2008-04-08

申请号：KR1020070054562

申请日：2007-06-04

Applicant: 한국전자통신연구원

Inventor： 최낙진 ,  정민경 ,  박강호 ,  이효영 ,  김종대

IPC: H01L21/027 ,  B82Y40/00

CPC classification number: G03F7/0002 ,  B81C1/0046 ,  B82Y40/00 ,  H01L21/02603 ,  Y10S977/887

Abstract: A method for fabricating a nano wire device using nano imprinting lithography is provided to reduce an interval of fabrication time of a nano wire device by forming a pattern only once. An insulation layer(20) is formed on a substrate(10). A nano wire solution including a nano wire(60) is deposited on the insulation layer wherein a plurality of nano wires and an organic solvent can be mixed in the nano wire solution. Photoresist is formed on the resultant structure. The photoresist is stamped by using a nano imprinting stamp having a pattern of a nano size. A metal layer for a metal electrode is deposited on the stamped photoresist. The photoresist remaining on the insulation layer is removed by a lift-off process.

Abstract translation: 提供使用纳米压印光刻制造纳米线器件的方法，通过仅形成一次图案来减少纳米线器件的制造时间的间隔。 绝缘层（20）形成在基板（10）上。 包括纳米线（60）的纳米线溶液沉积在绝缘层上，其中可以在纳米线溶液中混合多根纳米线和有机溶剂。 在所得结构上形成光刻胶。 通过使用具有纳米尺寸图案的纳米压印印模冲压光致抗蚀剂。 用于金属电极的金属层沉积在冲压的光致抗蚀剂上。 通过剥离工艺除去残留在绝缘层上的光致抗蚀剂。