公开(公告)号：KR1020140068536A

公开(公告)日：2014-06-09

申请号：KR1020120136144

申请日：2012-11-28

Applicant: 한국전자통신연구원 ,  서울대학교산학협력단

Inventor： 류호준 ,  홍용택 ,  지선범 ,  임화림

IPC: H01L21/336 ,  H01L29/786

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02623 ,  H01L21/324

Abstract: A method of forming an oxide semiconductor is provided. The method comprises a step of coating a substrate with an oxide semiconductor solution; a step of providing the substrate to an oxygen atom-containing gas atmosphere; and a step of forming the oxide semiconductor solution into an oxide semiconductor film by conducting a thermal treatment process at 300°C or less.

Abstract translation: 提供一种形成氧化物半导体的方法。 该方法包括用氧化物半导体溶液涂覆衬底的步骤; 将基板提供到含氧原子的气体气氛的步骤; 以及通过在300℃以下的热处理工序将氧化物半导体溶液形成氧化物半导体膜的工序。