公开(公告)号：KR1020090056789A

公开(公告)日：2009-06-03

申请号：KR1020080064462

申请日：2008-07-03

Applicant: 한국전자통신연구원 ,  한국정보통신대학교 산학협력단

Inventor： 김창선 ,  김무성 ,  윤병진 ,  홍은표 ,  유형준

IPC: H03F1/26

CPC classification number: H03F1/26 ,  H03F1/223 ,  H03F1/347 ,  H03F3/191 ,  H03F2200/294

Abstract: A multi band low noise amplifier is provided to reduce a value of a passive device for input terminal matching in a low frequency band by sharing the passive device of the input terminal matching circuit. A first matching circuit(110) performs the impedance matching of the input terminal in a low frequency region. A first transistor includes a gate connected to a first matching circuit and a drain connected to an output terminal, and performs the amplification operation of the low frequency input. A first degeneration inductor is connected between the ground and the source of the first transistor. A second matching circuit(120) performs the impedance matching of the input terminal in a high frequency region. A second transistor includes the gate connected to the second matching circuit and the drain connected to the output terminal, and performs the amplification operation of the high frequency input. A second degeneration inductor is connected between the ground and the source of the second transistor.

Abstract translation: 提供一种多频带低噪声放大器，通过共享输入端子匹配电路的无源器件来降低用于低频带中的输入端子匹配的无源器件的值。 第一匹配电路（110）在低频区域中执行输入端子的阻抗匹配。 第一晶体管包括连接到第一匹配电路的栅极和连接到输出端子的漏极，并且执行低频输入的放大操作。 第一退化电感器连接在第一晶体管的接地和源极之间。 第二匹配电路（120）在高频区域中执行输入端子的阻抗匹配。 第二晶体管包括连接到第二匹配电路的栅极和连接到输出端子的漏极，并且执行高频输入的放大操作。 第二退化电感器连接在第二晶体管的接地和源极之间。