公开(公告)号：KR100324461B1

公开(公告)日：2002-02-27

申请号：KR1019990033321

申请日：1999-08-13

Applicant: 한국표준과학연구원

Inventor： 임해용 ,  김인선 ,  김동호 ,  박용기

IPC: H01L39/24

Abstract: 본발명은계단형모서리조셉슨접합의제조방법에관한것이다. 본발명에따른계단형모서리조셉슨접합의제조방법은사파이어기판상에금(Au)막을형성하는단계; 상기금막상에제 1 포토레지스트패턴을형성하는단계; 상기제 1 포토레지스트패턴을식각마스크로사용하여상기금막및 상기사파이어기판의일부가경사진계단형상으로되도록식각하는제 1 건식식각단계; 상기제 1 포토레지스트패턴과금막을제거하는단계; 상기계단형상을갖는사파이어기판상에세륨옥사이드막을형성하는단계; 상기세륨옥사이드막상에 YBCO막을형성하는단계; 상기 YBCO막상에원하는접합형상의제 2 포토레지스트패턴을형성하는단계; 및상기제 2 포토레지스트패턴을식각마스크로사용하여상기 YBCO막과상기세륨옥사이드막을순차적으로식각하는제 2 건식식각단계;를포함하여이루어지는것을특징으로한다. 따라서, 재현성있는조셉슨접합을제조할수 있고, 초전도박막의임계전류값과정상저항값을용이하게조절할수 있는효과가있다.

公开(公告)号：KR1020010011862A

公开(公告)日：2001-02-15

申请号：KR1019990031425

申请日：1999-07-30

Applicant: 한국표준과학연구원

Inventor： 임해용 ,  김인선 ,  김동호 ,  박용기

IPC: H01L21/34

Abstract: PURPOSE: A method for forming a YBCO(YBa2Cu3O7-delta) thin film using a sapphire substrate is to improve a critical current density and a critical temperature of the YBCO to be formed on an upper part of a CeO2 film by improving a surface roughness of the CeO2 to be used as a buffer film. CONSTITUTION: A method for forming a YBCO thin film comprises the steps of: locating a sapphire substrate(30) on a substrate holder of a resonance chamber in a PLD(Pulsed Laser Deposition) equipment; regulating and maintaining the temperature of the substrate holder in the range of 750 to 850 deg.C; depositing a CeO2 film(32) as a buffer film on the sapphire substrate by scanning a laser beam to a target of the CeO2 material after regulating the inner pressure of the resonance chamber in the range of 45 to 55 mTorr, and an energy density of an excimer laser in the range of 0.8 to 2.0 J/square centimeter; and depositing a YBCO thin film(34) on the CeO2 film by an in-situ within the resonance chamber. The CeO2 is formed at a thickness of 10 to 100 nm.

Abstract translation: 目的：使用蓝宝石衬底形成YBCO（YBa2Cu3O7-δ）薄膜的方法是通过改善在CeO 2膜的上部上形成的YBCO的临界电流密度和临界温度来提高其表面粗糙度 CeO2用作缓冲膜。 构成：用于形成YBCO薄膜的方法包括以下步骤：将蓝宝石衬底（30）定位在PLD（脉冲激光沉积）设备中的谐振室的衬底保持器上; 将基板保持器的温度调节和维持在750〜850℃的范围内; 通过在将共振室的内部压力调节到45〜55mTorr的范围内，将激光束扫描到CeO 2材料的靶上，在蓝宝石衬底上沉积CeO 2膜（32）作为缓冲膜，并且将能量密度 准分子激光器的范围为0.8〜2.0J /平方厘米; 以及在共振室内原位沉积在CeO 2膜上的YBCO薄膜（34）。 CeO 2的厚度为10〜100nm。

公开(公告)号：KR100302645B1

公开(公告)日：2001-09-29

申请号：KR1019990031425

申请日：1999-07-30

Applicant: 한국표준과학연구원

Inventor： 임해용 ,  김인선 ,  김동호 ,  박용기

IPC: H01L21/34

Abstract: 본발명은임계전류밀도및 임계온도를향상시킬수 있는사파이어기판을이용한 YBCO박막의형성방법에관한것이다. 본발명에따른사파이어기판을이용한 YBCO박막의형성방법은, 사파이어기판을 PLD설비의진공챔버의기판홀더상에위치시키는단계, 상기기판홀더의온도를 750 ℃내지 850 ℃로조절하고그 온도를유지하는단계, 상기진공챔버의내부압력을 45 mTorr 내지 55 mTorr로조절하고, 엑시머레이저의에너지밀도를 0.8 J/㎠내지 2.0 J/㎠로조절하여세륨옥사이드재질의타겟에레이저빔을주사함으로써상기사파이어기판상에버퍼막으로세륨옥사이드막을증착하는단계및 상기진공챔버내부에서인시튜로상기세륨옥사이드막상에 YBCO박막을증착하는단계를포함하여이루어지는것을특징으로한다. 따라서, YBCO박막의임계전류밀도및 임계온도가향상되어상기 YBCO박막이응용되는마이크로파소자, 한류기, SQUID 및 SFQ 등의전자소자의신뢰도를향상시킬수 있는효과가있다.

公开(公告)号：KR1020010017666A

公开(公告)日：2001-03-05

申请号：KR1019990033321

申请日：1999-08-13

Applicant: 한국표준과학연구원

Inventor： 임해용 ,  김인선 ,  김동호 ,  박용기

IPC: H01L39/24

Abstract: PURPOSE: A method for manufacturing a step-edge Josephson junction is to reduce a manufacturing cost by forming a Josephson junction on an inexpensive sapphire substrate, and to provide a current-voltage characteristic having a high critical value of critical current(Ic) multiplied by normal resistance(Rn) by making a step edge have a low inclination angle. CONSTITUTION: A gold layer is formed on a sapphire substrate. The first photoresist pattern is formed on the gold layer. The gold and a part of the sapphire substrate are dry-etched to an inclined step shape by using the first photoresist pattern and an etching mask. The photoresist pattern and the gold layer are eliminated. A cerium oxide layer is formed on the sapphire substrate having the step shape. A YBCO layer is formed on the cerium oxide layer. The second photoresist pattern having a desired junction shape is formed on the YBCO layer. The YBCO layer and the cerium oxide layer are sequentially dry-etched by using the second photoresist pattern as an etching mask.

Abstract translation: 目的：制造阶梯式约瑟夫逊结的方法是通过在便宜的蓝宝石衬底上形成约瑟夫逊结来降低制造成本，并提供具有高临界临界电流（Ic）乘以的电流 - 电压特性 通过使台阶边缘具有低倾斜角度的正常电阻（Rn）。 构成：在蓝宝石衬底上形成金层。 第一光致抗蚀剂图案形成在金层上。 通过使用第一光致抗蚀剂图案和蚀刻掩模，将金和蓝宝石衬底的一部分干蚀刻成倾斜的台阶形状。 消除了光刻胶图案和金层。 在具有台阶形状的蓝宝石基板上形成氧化铈层。 YBCO层形成在氧化铈层上。 具有所需结点形状的第二光致抗蚀剂图案形成在YBCO层上。 通过使用第二光致抗蚀剂图案作为蚀刻掩模，依次干蚀刻YBCO层和氧化铈层。