公开(公告)号：EP2279526A4

公开(公告)日：2015-11-04

申请号：EP09755220

申请日：2009-04-17

Applicant: 1366 TECHNOLOGIES INC

Inventor： GABOR ANDREW M ,  WALLACE RICHARD L

IPC: H01L31/00

CPC classification number: H01L31/1804 ,  H01L21/228 ,  H01L21/6715 ,  H01L31/022425 ,  H01L31/0288 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2430653A4

公开(公告)日：2014-09-03

申请号：EP10772893

申请日：2010-05-07

Applicant: 1366 TECHNOLOGIES INC

Inventor： SACHS EMANUEL M ,  GABOR ANDREW M

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/316 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L21/76802 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

Abstract: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.

Abstract translation: 多孔剥离层有助于从诸如半导体的表面去除膜。 提供通常大于膜厚度的孔隙率的层，其中不需要膜。 将膜施加在多孔层上以及其所需的位置。 然后将多孔材料和膜从不需要膜的区域去除。 多孔层可以作为浆料提供，干燥以在一个场内打开孔隙率或逸散性颗粒，其在施加热或溶剂时解离。 可以通过由于膜不桥接固体部分之间的空隙而产生的孔隙进入的蚀刻剂去除膜。 蚀刻剂攻击电影表面。 颗粒的直径可以是膜厚的四至十倍。 颗粒可以是二氧化硅，氧化铝和陶瓷。 多孔层可用于凹陷或平面。