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    CRYSTAL RIBBON FABRICATION WITH MULTI-COMPONENT STRINGS
    1.
    发明申请
    CRYSTAL RIBBON FABRICATION WITH MULTI-COMPONENT STRINGS 审中-公开
    具有多组分条纹的晶体织物制造

    公开(公告)号：WO2012094169A3

    公开(公告)日：2012-08-23

    申请号：PCT/US2011066842

    申请日：2011-12-22

    Applicant: 1366 TECHNOLOGIES INC ,  SACHS EMANUEL M ,  SERDY JAMES G

    Inventor： SACHS EMANUEL M ,  SERDY JAMES G

    IPC: B32B9/00

    CPC classification number: C30B15/007 ,  C30B29/06

    Abstract: A string for growing ribbon crystal has a core and an outer cover, the cover composed of at least two different materials, chosen with the material of the core in amount and kind such that the CTE of the covered core matches in net, that of the silicon ribbon. The cover material is also chosen so that silicon readily wets significantly around the string, subtending an angle of at least about 55 degrees, up to a fully wetted string, resulting in a relatively thick strong ribbon adjacent the string, closer in thickness to the diameter of the sting. This prevents a thin, fragile ribbon near the string. For silicon ribbon, a cover may be an interspersed composition that is predominantly of silica, with some SiC. The core may also be composed of silica and SiC, in different proportions, and different geometry, or may be a single material, such as Carbon.

    Abstract translation: 用于生长的带状晶体的线条具有芯部和外部覆盖物，所述覆盖物由至少两种不同的材料组成，所述材料以所述芯部的材料的数量和种类选择，使得覆盖芯部的CTE在网中匹配， 硅带。 覆盖材料也被选择成使得硅容易在弦周围显着地凸起，对角至少约55度的角度，直到完全润湿的绳子，导致相邻的弦的相对厚的强带，其厚度更接近于直径 的刺痛。 这样可以防止弦线附近的薄而脆弱的丝带。 对于硅带，覆盖物可以是主要由二氧化硅和一些SiC的散置组合物。 芯也可以由不同比例和不同几何形状的二氧化硅和SiC组成，或者可以是单一材料，例如碳。

    MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET
    2.
    发明申请
    MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET 审中-公开
    使用自由插入片材制作材料的半导体器件

    公开(公告)号：WO2012075306A3

    公开(公告)日：2013-07-25

    申请号：PCT/US2011062914

    申请日：2011-12-01

    Applicant: 1366 TECHNOLOGIES INC ,  JONCZYK RALF ,  SACHS EMANUEL M

    Inventor： JONCZYK RALF ,  SACHS EMANUEL M

    IPC: H01L21/02 ,  C30B19/02

    CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521

    Abstract: Interposer sheet for making silicon solar semiconductor bodies. Interposer is free-standing, thin, flexible, porous and withstands chemical/thermal environment of molten semiconductor without degradation. Interposer is of ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. Provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. Secured to the forming surface or deposited upon the melt. Interposer suppresses grain nucleation, and limits heat flow from the melt, promotes separation of the semiconductor body from the forming surface, prefabricated before use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. Interposer and semiconductor body are free to expand and contract relatively independently of the forming surface.

    Abstract translation: 制造硅太阳能半导体器件的插入片。 中间层是独立的，薄的，柔性的，多孔的并且耐受熔融半导体的化学/热环境而不降解。 中间体是陶瓷材料，例如二氧化硅，氮化硅，氮氧化硅，碳氧化硅，碳化硅，碳氮化硅，碳氮氧化硅等。 在模板的成形表面和将形成半导体本体的熔融材料之间。 固定在成型表面上或沉积在熔体上。 中间层抑制晶粒成核，并限制来自熔体的热流，促进半导体本体与成形表面的分离，在使用前预制。 由于独立且不粘附到成型表面，CTE的失配问题被最小化。 内插器和半导体主体可以独立于成形表面自由地膨胀和收缩。

    METHODS TO SELECTIVELY TREAT PORTIONS OF A SURFACE USING A SELF-REGISTERING MASK
    3.
    发明申请
    METHODS TO SELECTIVELY TREAT PORTIONS OF A SURFACE USING A SELF-REGISTERING MASK 审中-公开
    使用自注册掩模选择表面处理方法的方法

    公开(公告)号：WO2013103930A3

    公开(公告)日：2015-06-11

    申请号：PCT/US2013020435

    申请日：2013-01-06

    Applicant: 1366 TECHNOLOGIES INC

    Inventor： TARASOV VLADIMIR ,  ERSEN ALI ,  STERN ERIC ,  CRISCIONE JASON M ,  SACHS EMANUEL M

    IPC: H01L21/00

    CPC classification number: H01L31/02363 ,  H01L31/0248 ,  Y02E10/50

    Abstract: Processes increase light absorption into silicon wafers by selectively changing the reflective properties of the bottom portions of light trapping cavity features. Modification of light trapping features includes: deepening the bottom portion, increasing the curvature of the bottom portion, and roughening the bottom portion, all accomplished through etching. Modification may also be by the selective addition of material at the bottom of cavity features. Different types of features in the same wafers may be treated differently. Some may receive a treatment that improves light trapping while another is deliberately excluded from such treatment. Some may be deepened, some roughened, some both. No alignment is needed to achieve this selectively. The masking step achieves self-alignment to previously created light trapping features due to softening and deformation in place.

    Abstract translation: 通过选择性地改变光阱特征的底部的反射特性，工艺增加了对硅晶片的光吸收。 光捕获特征的改进包括：深化底部部分，增加底部部分的曲率，以及粗糙化底部部分，全部通过蚀刻来实现。 修改也可以通过在腔体特征的底部选择性地添加材料。 不同类型的相同晶片中的特征可以被不同地对待。 有些可能会接受改善光线捕获的治疗方法，而另一种方法被故意排除在这种治疗之外。 有些可能会加深，有些粗糙，有的两个。 不需要对准以选择性地实现。 掩蔽步骤由于在现场的软化和变形而实现了先前产生的光捕获特征的自对准。

    APPARATUS AND PROCESS FOR DEPOSITING A THIN LAYER OF RESIST ON A SUBSTRATE
    4.
    发明申请
    APPARATUS AND PROCESS FOR DEPOSITING A THIN LAYER OF RESIST ON A SUBSTRATE 审中-公开
    在基板上沉积薄层的装置和工艺

    公开(公告)号：WO2013056059A3

    公开(公告)日：2014-06-19

    申请号：PCT/US2012059967

    申请日：2012-10-12

    Applicant: 1366 TECHNOLOGIES INC

    Inventor： DANNER GUY M ,  GATES HOLLY G ,  TARASOV VLADIMIR S ,  KANE PETER E ,  MADDEN PETER G ,  SACHS EMANUEL M

    IPC: C23C18/14

    CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B13/02 ,  B05B15/04 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

    Abstract: A thin polymer film is formed on a substrate. An apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. An apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid; the liquid being suitable for jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices, establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

    Abstract translation: 在基板上形成薄的聚合物膜。 描述了一种用于将固体聚合物抗蚀剂转化成小颗粒气溶胶的装置，将颗粒静电充电并沉积到基底上，并将颗粒流入连续层。 进一步描述了通过加热抗蚀剂以将固体抗蚀剂转化成小颗粒的气溶胶以形成低粘度液体的装置; 该液体适用于喷射或冲击雾化和气溶胶颗粒尺寸以形成气溶胶。 进一步描述了使用电离气体将电荷赋予气溶胶颗粒并使用充电装置的进展的方法，建立了将带电粒子的流动引导到基底的电场。 充电装置和相关设备的进展导致气溶胶颗粒的高收集效率。

    POROUS LIFT-OFF LAYER FOR SELECTIVE REMOVAL OF DEPOSITED FILMS
    5.
    发明公开
    POROUS LIFT-OFF LAYER FOR SELECTIVE REMOVAL OF DEPOSITED FILMS 审中-公开
    PORÖSEABLÖSESCHICHTZUR SELEKTIVEN ENTFERNUNG ABGELAGERTER FILME

    公开(公告)号：EP2430653A4

    公开(公告)日：2014-09-03

    申请号：EP10772893

    申请日：2010-05-07

    Applicant: 1366 TECHNOLOGIES INC

    Inventor： SACHS EMANUEL M ,  GABOR ANDREW M

    IPC: H01L21/306 ,  H01L21/02 ,  H01L21/316 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18

    CPC classification number: H01L31/022425 ,  H01L21/76802 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

    Abstract: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A layer, with porosities typically larger than the film thickness is provided where no film is desired. The film is applied over the porous layer and also where it is desired. The porous material and the film are then removed from areas where film is not intended. The porous layer can be provided as a slurry, dried to open porosities, or fugitive particles within a field, which disassociate upon the application of heat or solvent. The film can be removed by etchant that enters through porosities that have arisen due to the film not bridging the spaces between solid portions. Etchant attacks both film surfaces. Particles may have diameters of four to ten times the film thickness. Particles may be silica, alumina and ceramics. Porous layers can be used in depressions or on flat surfaces.

    Abstract translation: 多孔剥离层有助于从诸如半导体的表面去除膜。 提供通常大于膜厚度的孔隙率的层，其中不需要膜。 将膜施加在多孔层上以及其所需的位置。 然后将多孔材料和膜从不需要膜的区域去除。 多孔层可以作为浆料提供，干燥以在一个场内打开孔隙率或逸散性颗粒，其在施加热或溶剂时解离。 可以通过由于膜不桥接固体部分之间的空隙而产生的孔隙进入的蚀刻剂去除膜。 蚀刻剂攻击电影表面。 颗粒的直径可以是膜厚的四至十倍。 颗粒可以是二氧化硅，氧化铝和陶瓷。 多孔层可用于凹陷或平面。

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