公开(公告)号：WO2012075306A3

公开(公告)日：2013-07-25

申请号：PCT/US2011062914

申请日：2011-12-01

Applicant: 1366 TECHNOLOGIES INC ,  JONCZYK RALF ,  SACHS EMANUEL M

Inventor： JONCZYK RALF ,  SACHS EMANUEL M

IPC: H01L21/02 ,  C30B19/02

CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521

Abstract: Interposer sheet for making silicon solar semiconductor bodies. Interposer is free-standing, thin, flexible, porous and withstands chemical/thermal environment of molten semiconductor without degradation. Interposer is of ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. Provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. Secured to the forming surface or deposited upon the melt. Interposer suppresses grain nucleation, and limits heat flow from the melt, promotes separation of the semiconductor body from the forming surface, prefabricated before use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. Interposer and semiconductor body are free to expand and contract relatively independently of the forming surface.

Abstract translation: 制造硅太阳能半导体器件的插入片。 中间层是独立的，薄的，柔性的，多孔的并且耐受熔融半导体的化学/热环境而不降解。 中间体是陶瓷材料，例如二氧化硅，氮化硅，氮氧化硅，碳氧化硅，碳化硅，碳氮化硅，碳氮氧化硅等。 在模板的成形表面和将形成半导体本体的熔融材料之间。 固定在成型表面上或沉积在熔体上。 中间层抑制晶粒成核，并限制来自熔体的热流，促进半导体本体与成形表面的分离，在使用前预制。 由于独立且不粘附到成型表面，CTE的失配问题被最小化。 内插器和半导体主体可以独立于成形表面自由地膨胀和收缩。

公开(公告)号：EP2406413A4

公开(公告)日：2014-01-01

申请号：EP10751275

申请日：2010-03-09

Applicant: 1366 TECHNOLOGIES INC

Inventor： SACHS EMANUEL M ,  WALLACE RICHARD L ,  HANTSOO EERIK T ,  LORENZ ADAM M ,  HUDELSON G D STEPHEN ,  JONCZYK RALF

IPC: C03B19/02 ,  C30B11/00 ,  C30B15/30 ,  C30B19/06 ,  C30B28/04 ,  C30B29/06 ,  H01L21/02 ,  H01L31/18

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

公开(公告)号：EP2647032A4

公开(公告)日：2014-07-09

申请号：EP11845655

申请日：2011-12-01

Applicant: 1366 TECHNOLOGIES INC

Inventor： JONCZYK RALF ,  SACHS EMANUEL M

IPC: H01L21/02 ,  C30B19/02

CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521