公开(公告)号：JPH07335864A

公开(公告)日：1995-12-22

申请号：JP12667295

申请日：1995-05-25

Applicant: ABB MANAGEMENT AG

Inventor： PEETAA SHIYUTORAITO

IPC: H01L29/08 ,  H01L29/74 ,  H01L29/744

Abstract: PURPOSE: To realize an adequate voltage sustaining capability even at a high temp. by providing a p-type barrier layer having gaps which an n-type base layer contacts directly or through an anode short-circuit by an anode. CONSTITUTION: A semiconductor substrate between an anode 1 and cathode 2 has an n-type emitter layer 4, p-type base layer 5, n-type base layer 6 and p-type emitter layer 7. The emitter layer 7 is bored by anode short-circuit regions 8 which short-circuit the base layer 6 with the anode 1. Between the anode short circuit regions 8 and the p-types emitter layer 7, a p-type barrier layer 9 is disposed and has gaps 12 which the base layer 6 contacts directly or through the regions 8 by the anode 1. This realizes adequate voltage sustaining capability even at high temps.

公开(公告)号：JPH07231086A

公开(公告)日：1995-08-29

申请号：JP1735295

申请日：1995-02-03

Applicant: ABB MANAGEMENT AG

Inventor： ANDORE IEKURIN ,  ETSUATORAA RAMETSUAANI ,  PEETAA ROGUBUIRAA ,  ANDOREASU RIYUUETSUGU ,  TOOMASU SHIYUTOTSUKUMAIAA ,  PEETAA SHIYUTORAITO ,  YURUKU BUARUTOMAIAA

IPC: H01L23/367 ,  H01L29/74 ,  H01L29/744

Abstract: PURPOSE: To improve a semiconductor device which has a disc-type semiconductor substrate on which an anode, a cathode and a GTO thyristor having a control electrode are provided and which can be turned off, so as to reduce thermal problems in the edge region of the semiconductor substrate. CONSTITUTION: At least one cooling segment 15 which has a cooling segment metallized part 13 is provided in the edge side region of a semiconductor substrate, and an electrical insulating layer 14 is provided under the cooling segment metallized part.

公开(公告)号：JPH07161968A

公开(公告)日：1995-06-23

申请号：JP22960294

申请日：1994-09-26

Applicant: ABB MANAGEMENT AG

Inventor： FURIITOHERUMU BAUAA ,  PEETAA SHIYUTORAITO

IPC: H01L29/74 ,  H01L29/08 ,  H01L29/744

Abstract: PURPOSE: To reduce a turn off loss by specifying a part of minority carriers in the current flowing a power semiconductor in a cathode emitter region having low discharge efficiency. CONSTITUTION: A cathode emitter 7 recesses multiple islands 15 which are doped to an opposite type for a general emitter profile at a relatively high discharge capacity. These islands 15 penetrate to a depth of an emitter layer 7 so that the life time of minority carriers corresponding to the doping height is still relatively high. The minority carrier density is correspondingly high. Because of this, the minor carriers depart from the emitter through the in- diffused islands 15. As a result, the region under the island 15 acts as an emitter region of weak electron release. With the cathode emitter having a low emitter efficiency, 10% or more of the entire current at the cathode emitter is transported by the minority carriers, resulting in a violent reduction in the turn-off loss.