公开(公告)号：JPH08213639A

公开(公告)日：1996-08-20

申请号：JP27922095

申请日：1995-10-26

Applicant: ABB MANAGEMENT AG

Inventor： FURIITOHERUMU BAUAA

IPC: H01L29/861 ,  H01L27/04 ,  H01L29/739 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a new diode which can handle high dI/dt value and high voltage without problems. SOLUTION: On a main surface 3 on anode side, a diode 1 having an electron injection means is provided. After passing a reverse surface peak, the means injects electron to anode/emitter. This compensates a hole and decreases possibility of dynamic field overshoot which triggers avalanche breakdown. The electron injection means is to be provided with a n-channel MOS cell preferably. With a diode, a high voltage and a high dI/dt value can be handled with safety. A diode is preferably used as a free wheel diode in a converter circuit configuration body.

公开(公告)号：JPH09116152A

公开(公告)日：1997-05-02

申请号：JP26005796

申请日：1996-10-01

Applicant: ABB MANAGEMENT AG

Inventor： FURIITOHERUMU BAUAA

IPC: H01L29/74 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: PROBLEM TO BE SOLVED: To provide a new power semiconductor device capable of being simply manufactured in a competitive pricing method though the semiconductor device has low forward resistance. SOLUTION: In a power semiconductor device, the hole drawing efficiency of trough regions 2, preferably P -doped-trough regions incorporated to a semiconductor substrate 1 is reduced by non-conductive buried layers 3. The treatment has the effect of the increase of charge carrier density in the overall thickness of members. Accordingly, a lower forward resistance is obtained.

公开(公告)号：JPH07161968A

公开(公告)日：1995-06-23

申请号：JP22960294

申请日：1994-09-26

Applicant: ABB MANAGEMENT AG

Inventor： FURIITOHERUMU BAUAA ,  PEETAA SHIYUTORAITO

IPC: H01L29/74 ,  H01L29/08 ,  H01L29/744

Abstract: PURPOSE: To reduce a turn off loss by specifying a part of minority carriers in the current flowing a power semiconductor in a cathode emitter region having low discharge efficiency. CONSTITUTION: A cathode emitter 7 recesses multiple islands 15 which are doped to an opposite type for a general emitter profile at a relatively high discharge capacity. These islands 15 penetrate to a depth of an emitter layer 7 so that the life time of minority carriers corresponding to the doping height is still relatively high. The minority carrier density is correspondingly high. Because of this, the minor carriers depart from the emitter through the in- diffused islands 15. As a result, the region under the island 15 acts as an emitter region of weak electron release. With the cathode emitter having a low emitter efficiency, 10% or more of the entire current at the cathode emitter is transported by the minority carriers, resulting in a violent reduction in the turn-off loss.

公开(公告)号：JPH0883900A

公开(公告)日：1996-03-26

申请号：JP16855395

申请日：1995-07-04

Applicant: ABB MANAGEMENT AG

Inventor： FURIITOHERUMU BAUAA ,  SHIMON AITSUHIYAA

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/74 ,  H01L29/744

Abstract: PROBLEM TO BE SOLVED: To obtain a gate turn-off thyristor GTO, which does not make switching losses and can be actuated in a high switching frequency. SOLUTION: A GTO has anode emitters 6, a barrier layer 11, an N-type base 7, a P-type base 8 and a cathode emitter 9, including an anode side main surface 2. The anode emitters 6 are designed as transparent emitters and respectively have an anode short circuit 10. By a combination of the main surface 2, the bases 7 and 8 and the emitter 9 with the layer 11, the transparent anode emitters and the circuits 10, the GTO which is actuated in a high switching frequency, is obtained and although the thickness of a substrate of the GTO is reduced, the switching loss of the GTO is not increased.

公开(公告)号：JPH0864823A

公开(公告)日：1996-03-08

申请号：JP19842895

申请日：1995-08-03

Applicant: ABB MANAGEMENT AG

Inventor： FURIITOHERUMU BAUAA

IPC: H01L29/74 ,  H01L29/06 ,  H01L29/08 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To reduce susceptibility to oscillation of components by specifying the percentage of all component surface area, in the case of having a cathode cell of circular cell geometry or of strip-shaped geometry. SOLUTION: In order to reduce the susceptibility of component oscillation, the bonding between an anode 4 and a cathode 3 is enhanced. This is attained by raising a gate 5-anode 4 capacitance. Therefor, a separation (d) between two cathode cells 6 is significantly widened as compared with the conventional technology. A separation standard is represented by a surface area percentage of the cathode/cell 6 to the entire surface region of the component. By making the percentage of cathode/cell 6 to be 0.1-10% in the case of a circular cell geometry while it is 0.4-40% in the case of strip-shaped geometry, oscillation can be avoided effectively.