公开(公告)号：JPH08288456A

公开(公告)日：1996-11-01

申请号：JP8540796

申请日：1996-04-08

Applicant: ABB MANAGEMENT AG

Inventor： TOOMASU SHIYUTOTSUKUMAIAA ,  UUBUE TEIIMAN ,  RAINHORUTO BAIERAA

IPC: H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To shorten a connecting line to a control unit and reduce an inductance by extending power connections in parallel with as base plate where a power semiconductor switching element is adapted onto it. SOLUTION: A control unit 12 is sealed on a housing 2 of a module 1 by a screw 10 passing through a corresponding screw hole 11. The power semiconductor module 1 has a number of control and auxiliary connections 13, and the connections are connected to the control unit 12 by a plug. Furthermore, the module 1 has two power connections 5 and 6, and the connections are led to a side part from the housing 2. The control unit 12 is directly arranged on the housing 2 of the module, thus shortening the connecting line between the control and auxiliary connections 13 and the control unit 12 greatly and lowering an inductance.

公开(公告)号：JPH088397A

公开(公告)日：1996-01-12

申请号：JP14077695

申请日：1995-06-07

Applicant: ABB MANAGEMENT AG

Inventor： RAINHORUTO BAIERAA ,  TOOMASU SHIYUTOTSUKUMAIAA

IPC: H01L23/473 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H02M7/00

Abstract: PURPOSE: To provide a new power semiconductor module that is suited for an ultra-high output and can solve conventional technical problems. CONSTITUTION: In the case of a power semiconductor module 1, a substrate 8 with a power semiconductor assembly 2 is engaged to both sides of a heat sink 3. The power semiconductor assembly 2 is brought into contact by a stack of contact laminations 4 being extended in parallel for the heat sink 3, thus obtaining an ultra-low impedance structure.