公开(公告)号：JPH07263626A

公开(公告)日：1995-10-13

申请号：JP2142195

申请日：1995-02-09

Applicant: ABB MANAGEMENT AG

Inventor： TOOMASU SUTOTSUKUMAIAA ,  UUBUE TEIIMAN

IPC: H01L29/74 ,  H01L25/10 ,  H01L25/11 ,  H01L25/18

Abstract: PURPOSE: To enable parallel connection without preliminary selection or dilation by a method, wherein a large number of signal connection parts connected mutually are provided and a single power semiconductor module, which can be selected freely is connected to a control device, at the time when the modules in a plurality are connected in parallel. CONSTITUTION: A power semiconductor module 1 has a large number of signal connection parts 4.1-4.4, which are disposed on another side of a package. Moreover, an interface whereon a signal emitted from a control device and transmitted through an optical waveguide is coverted into the optimum one for a signal bus may be incorporated in the power semiconductor module. Accordingly, the signal connection parts 4.1-4.4 are connected to gate connection parts 5.1 and 5.2 in relation to the signal. When a plurality of power semiconductor modules 1 are connected in parallel, the signal connection parts 4.1-4.4 in large numbers which can be connected to the gate connection parts 5.1 and 5.2 in relation to the signal are incorporated in a circuit device and this forms the signal bus.

公开(公告)号：JPH08288456A

公开(公告)日：1996-11-01

申请号：JP8540796

申请日：1996-04-08

Applicant: ABB MANAGEMENT AG

Inventor： TOOMASU SHIYUTOTSUKUMAIAA ,  UUBUE TEIIMAN ,  RAINHORUTO BAIERAA

IPC: H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To shorten a connecting line to a control unit and reduce an inductance by extending power connections in parallel with as base plate where a power semiconductor switching element is adapted onto it. SOLUTION: A control unit 12 is sealed on a housing 2 of a module 1 by a screw 10 passing through a corresponding screw hole 11. The power semiconductor module 1 has a number of control and auxiliary connections 13, and the connections are connected to the control unit 12 by a plug. Furthermore, the module 1 has two power connections 5 and 6, and the connections are led to a side part from the housing 2. The control unit 12 is directly arranged on the housing 2 of the module, thus shortening the connecting line between the control and auxiliary connections 13 and the control unit 12 greatly and lowering an inductance.

公开(公告)号：JPH06275836A

公开(公告)日：1994-09-30

申请号：JP2175394

申请日：1994-02-21

Applicant: ABB MANAGEMENT AG

Inventor： TOOMASU SHIYUTOTSUKUMAIAA ,  UUBUE TEIIMAN

IPC: H01L29/74 ,  H01L23/29 ,  H01L23/60 ,  H01L27/02 ,  H01L29/43 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/784

Abstract: PURPOSE: To obtain a power semiconductor element for protecting against an electrostatic breakdown. CONSTITUTION: The semiconductor element 1 comprises a semiconductor substrate 10 having at least one MOS structure. Generally, its gate 7 is insulated from the substrate 10 and disposed. This structure is easily damaged by the electrostatic breakdown of an insulating layer caused by static charge. A limited current is performed between a gate electrode 3 and a main electrode 2, and the insulating layer is replaced with a semiinsulating layer 9 between the electrode 3 and the electrode 2 so as not to increase the potential difference. Thus, the element is protected against breakdown.