公开(公告)号：JPH0883900A

公开(公告)日：1996-03-26

申请号：JP16855395

申请日：1995-07-04

Applicant: ABB MANAGEMENT AG

Inventor： FURIITOHERUMU BAUAA ,  SHIMON AITSUHIYAA

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/74 ,  H01L29/744

Abstract: PROBLEM TO BE SOLVED: To obtain a gate turn-off thyristor GTO, which does not make switching losses and can be actuated in a high switching frequency. SOLUTION: A GTO has anode emitters 6, a barrier layer 11, an N-type base 7, a P-type base 8 and a cathode emitter 9, including an anode side main surface 2. The anode emitters 6 are designed as transparent emitters and respectively have an anode short circuit 10. By a combination of the main surface 2, the bases 7 and 8 and the emitter 9 with the layer 11, the transparent anode emitters and the circuits 10, the GTO which is actuated in a high switching frequency, is obtained and although the thickness of a substrate of the GTO is reduced, the switching loss of the GTO is not increased.