公开(公告)号：WO9926292A3

公开(公告)日：1999-07-29

申请号：PCT/SE9802049

申请日：1998-11-13

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  DANIELSSON ERIK

Inventor： HARRIS CHRISTOPHER ,  DANIELSSON ERIK

IPC: H01L29/24 ,  H01L29/51 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/513 ,  H01L29/1608 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises at least one semiconductor layer (4) of SiC and a layer (8) of a refractory metal nitride separated by an insulating layer (7) being at least next to the SiC layer of SiO2. The insulating layer comprises two sub layers, namely a first sub layer (9) of SiO2 next to the SiC layer and a second sub layer (10) of Si3N4 located between the first sub layer and the metal nitride layer.

Abstract translation: 一种半导体器件包括SiC的至少一个半导体层（4）和由绝缘层（7）分离的难熔金属氮化物层（8）至少在SiO 2的SiC层旁边。 绝缘层包括两个子层，即位于SiC层旁边的SiO 2的第一子层（9）和位于第一子层和金属氮化物层之间的Si 3 N 4的第二子层（10）。

公开(公告)号：SE9704150D0

公开(公告)日：1997-11-13

申请号：SE9704150

申请日：1997-11-13

Applicant: ABB RESEARCH LTD

Inventor： HARRIS CHRISTOPHER ,  DANIELSSON ERIK

IPC: H01L29/24 ,  H01L29/51 ,  H01L

Abstract: A semiconductor device comprises at least one semiconductor layer of SiC and a layer of a refractory metal nitride separated by an insulating layer located next to the SiC layer of SiO2. The insulating layer comprises two sub layers, namely a first sub layer of SiO2 next to the SiC layer and a second sub layer of Si3N4 located between the first sub layer and the metal nitride layer.