公开(公告)号：WO9900849A3

公开(公告)日：1999-03-25

申请号：PCT/SE9801255

申请日：1998-06-26

Applicant: ABB RESEARCH LTD ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  HARRIS CHRISTOPHER

Inventor： BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  HARRIS CHRISTOPHER

IPC: H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861

CPC classification number: H01L29/1608 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/7606

Abstract: A semiconductor device of planar structure, consisting of doped silicon carbide (SiC), comprising a pn junction, formed of a first conducting type layer (1) and on top thereof of a second conducting type layer (2), the edge of the second of said layers being provided with an edge termination (JTE) (3), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, where the pn junction and its JTE are covered by a third layer (4).

Abstract translation: 一种平面结构的半导体器件，由掺杂碳化硅（SiC）组成，包括由第一导电类型层（1）形成的pn结，并且在第二导电类型层（2）的顶部上形成第二 的所述层设置有边缘终止（JTE）（3），所述边缘终止（JTE）（3）围绕所述终端的外边界逐步或连续地减小有效片材电荷密度，其中所述pn结及其JTE被第三层（4）覆盖。

公开(公告)号：WO9726678A3

公开(公告)日：1997-10-02

申请号：PCT/SE9700062

申请日：1997-01-17

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER

Inventor： HARRIS CHRISTOPHER

IPC: H01L21/04 ,  H01L29/45

CPC classification number: H01L21/0485 ,  H01L29/45

Abstract: A semiconductor device comprises a semiconductor layer (1) of SiC, a metal layer (2) adapted to form a low resistance ohmic contact with the SiC-layer and a thin layer (3) of a material having a smaller bandgap than the SiC of the SiC-layer placed between the SiC-layer and the metal layer. The SiC-layer is at least in the region next to said thin layer highly doped. The material of said thin layer is a Group 3B-nitride. It has been realised that Group 3B-nitrides do not have pinned (fixed) Fermi-levels at the interface with the metal, which means that the work function of the metal will determine the Schottky-barrier height, so that it will be possible to choose a suitable metal for a low barrier. Thus, it is possible to form a low resistance ohmic contact between the SiC-layer at a metal layer by choosing a Group 3B-nitride having a smaller bandgap than the SiC of the SiC-layer as a thin layer between the metal layer and the SiC-layer.

公开(公告)号：WO9736313A3

公开(公告)日：1997-11-20

申请号：PCT/SE9700448

申请日：1997-03-18

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

Inventor： HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

IPC: H01L29/749 ,  H01L21/04 ,  H01L29/10 ,  H01L29/12 ,  H01L29/78 ,  H01L

CPC classification number: H01L29/1095 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7828

Abstract: A field controlled semiconductor device of SiC comprises superimposed in the order mentioned at least a drain (12), a highly doped substrate layer (1) and a low doped n-type drift layer (2). It has also a highly doped n-type source region layer (6) and a source (11) connected thereto. A doped channel region layer (4) connects the source region layer to the drift layer, and a current is intended to flow therethrough when the device is in an on-state. The device has also a gate electrode (9). The channel region layer has a substantially lateral extension and is formed by a low doped n-type layer (4). The gate electrode (9) is arranged to influence the channel region layer from above for giving a conducting channel (17) created therein from the source region layer to the drift layer a substantially lateral extension.

Abstract translation: SiC的场控半导体器件包括至少一个漏极（12），高度掺杂的衬底层（1）和低掺杂n型漂移层（2）的顺序叠加。 它还具有高度掺杂的n型源极区域层（6）和与其连接的源极（11）。 掺杂沟道区域层（4）将源极区域层连接到漂移层，并且当器件处于导通状态时，电流意图流过其中。 该器件还具有栅电极（9）。 沟道区域层具有基本上横向的延伸并且由低掺杂的n型层（4）形成。 栅电极（9）被布置成从上方影响沟道区层，用于从源区域层向漂移层产生导电沟道（17）大致横向延伸。

公开(公告)号：WO9926292A3

公开(公告)日：1999-07-29

申请号：PCT/SE9802049

申请日：1998-11-13

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  DANIELSSON ERIK

Inventor： HARRIS CHRISTOPHER ,  DANIELSSON ERIK

IPC: H01L29/24 ,  H01L29/51 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/513 ,  H01L29/1608 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprises at least one semiconductor layer (4) of SiC and a layer (8) of a refractory metal nitride separated by an insulating layer (7) being at least next to the SiC layer of SiO2. The insulating layer comprises two sub layers, namely a first sub layer (9) of SiO2 next to the SiC layer and a second sub layer (10) of Si3N4 located between the first sub layer and the metal nitride layer.

Abstract translation: 一种半导体器件包括SiC的至少一个半导体层（4）和由绝缘层（7）分离的难熔金属氮化物层（8）至少在SiO 2的SiC层旁边。 绝缘层包括两个子层，即位于SiC层旁边的SiO 2的第一子层（9）和位于第一子层和金属氮化物层之间的Si 3 N 4的第二子层（10）。

公开(公告)号：WO9926296A2

公开(公告)日：1999-05-27

申请号：PCT/SE9802048

申请日：1998-11-13

Applicant: ABB RESEARCH LTD ,  BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

Inventor： BIJLENGA BO ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  KONSTANTINOV ANDREY ,  GUSTAFSSON ULF

IPC: H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/66068 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

Abstract: A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Abstract translation: SiC的半导体器件适于在其阻挡状态下保持高电压。 该器件包括两个部件（1,2），每个部件包括一个或多个SiC半导体层并且串联连接在器件的两个相对端子之间，即子半导体器件（1）能够仅承受阻断状态下的低电压 以及能够承受器件阻断状态下的高电压的电压限制部分（2），并且适于通过在器件处于其阻断状态下取得大部分电压来保护所述子半导体器件。

公开(公告)号：WO9736316A3

公开(公告)日：1997-11-20

申请号：PCT/SE9700451

申请日：1997-03-18

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

Inventor： HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ANDERSSON MATS

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7455 ,  H01L29/749

Abstract: A field controlled semiconductor device of SiC comprising superimposed in the order mentioned a drain (15), a highly doped substrate layer (1), a highly doped n-type buffer layer (2) and a low doped n-type drift layer (3). It also has a highly doped n-type source region layer (7) and a source (14) connected thereto, a vertical trench (9) from above, a low doped n-type channel region layer (6) extending vertically along a wall (11) of said trench and connecting said source region layer to said drift layer and through which a current is intended to flow when the device is in an on-state. A gate electrode (12) is arranged in said trench at least along said wall and to, upon applying a voltage thereto, influence the charge carrier distribution of said channel region layer and by that the conductivity thereof. The device comprises further a p-type base layer (4) arranged laterally next to said channel region layer at the opposite side thereof with respect to the gate electrode for forming a vertical conducting channel in said channel region layer at a distance from said trench wall.

公开(公告)号：WO9736315A3

公开(公告)日：1997-11-27

申请号：PCT/SE9700450

申请日：1997-03-18

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  KONSTANTINOV ANDREI ,  JANZEN ERIK

Inventor： HARRIS CHRISTOPHER ,  KONSTANTINOV ANDREI ,  JANZEN ERIK

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/739 ,  H01L

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/7397

Abstract: An IGBT of SiC comprises superimposed a drain (1), a highly doped p-type substrate layer (2), a highly doped n-type buffer layer (3), a low doped n-type drift layer (4), a highly doped p-type base layer (5), a highly doped n-type source region layer (6) and source (7). The transistor also comprises a vertical trench (8) extending through the source region layer and the base layer and to the drift layer. It also comprises an additional low doped p-type layer (13) arranged laterally to the base layer, connecting it to an insulating layer (11) and extending vertically at least over the extension of the base layer. A gate electrode (12) is applied on the insulating layer for, upon applying a voltage to the gate electrode, forming a conducting inversion channel at the interface between said additional layer (13) and the insulating layer for electron transport from the source to the drain.

公开(公告)号：WO9736314A3

公开(公告)日：1997-11-20

申请号：PCT/SE9700449

申请日：1997-03-18

Applicant: ABB RESEARCH LTD ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF

Inventor： HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L

CPC classification number: H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

Abstract: A transistor of SiC comprises superimposed a drain (13), a highly doped substrate layer (1), a low doped n-type drift layer (2), a p-type base layer being divided into a first lower highly doped base sub-layer (3) and an upper low doped second base sub-layer (4) on top thereof, a highly doped n-type source region layer (6) and a source (11). It also has an insulating layer (8) with a gate electrode (9) thereon arranged on top of the base layer and extending laterally from the source region layer to a n-type layer (7) connected to the drift layer.

公开(公告)号：SE9704150D0

公开(公告)日：1997-11-13

申请号：SE9704150

申请日：1997-11-13

Applicant: ABB RESEARCH LTD

Inventor： HARRIS CHRISTOPHER ,  DANIELSSON ERIK

IPC: H01L29/24 ,  H01L29/51 ,  H01L

Abstract: A semiconductor device comprises at least one semiconductor layer of SiC and a layer of a refractory metal nitride separated by an insulating layer located next to the SiC layer of SiO2. The insulating layer comprises two sub layers, namely a first sub layer of SiO2 next to the SiC layer and a second sub layer of Si3N4 located between the first sub layer and the metal nitride layer.

公开(公告)号：SE9602408D0

公开(公告)日：1996-06-19

申请号：SE9602408

申请日：1996-06-19

Applicant: ABB RESEARCH LTD

Inventor： HARRIS CHRISTOPHER

IPC: H01L20060101 ,  H01L23/29 ,  H01L23/31 ,  H01L29/04 ,  H01L29/205 ,  H01L29/24 ,  H01L