3.
    发明专利
    未知

    公开(公告)号:AT218242T

    公开(公告)日:2002-06-15

    申请号:AT98811217

    申请日:1998-12-10

    Abstract: The resistor body of a nonlinear resistor element having PTC characteristics includes a pulverulent first filler, whose material, e.g. TiB2, TiC, VC, WC, ZrBr2, MoSi2, has a specific conductivity of at most 10-3 OMEGA cm and in which the particle sizes are between 10 and 40 mu , and also, in order to improve the voltage sustaining capability by extending the switching zone and to achieve uniform energy absorption, includes a likewise pulverulent second filler having varistor characteristics and particle sizes between 50 and 200 mu , whose specific resistance at field strengths >/=2000 V/cm such as occur in the switching region of the resistor element and above, is at most 50 OMEGA cm, preferably at most 15 OMEGA cm, the fillers being embedded in a matrix made of a thermoplastic, in particular HD polyethylene or a thermoset. The average particle size of the second filler should exceed that of the first filler by a factor of from 2 to 5. A potentially particularly suitable material for the second filler is SiC doped with Al, B, Ga, In, N, P, As, as is similarly doped ZnO.

    Resistor element for current limiting purposes especially during short-circuits

    公开(公告)号:DE19800470A1

    公开(公告)日:1999-07-15

    申请号:DE19800470

    申请日:1998-01-09

    Abstract: A resistor comprises a polymer matrix containing a low resistivity first filler and a second filler with a resistivity which decreases with increasing field strength and which has a specified maximum value at high field strengths. An electric resistor element with a resistive body of a polymer matrix, a first filler powder with a resistivity of \}10 OMICRON .cm and a second filler powder with a resistivity which decreases with increasing field strength and which has a value of \}50 OMICRON .cm at field strengths of \-2000 V/cm. Preferred Features: The second filler has a resistivity of \-10 OMICRON .cm and an average particle size greater than that of the first filler, the quotient of the average particle size of the first filler and that of the second filler being 2-5. The first filler consists of TiB2, TiC, VC, WC or ZrB2 of 10-40 mu m particle size and the second filler consists of doped SiC or doped ZnO of 50-200 mu m particle size. The resistive body contains 30-70 vol.% first filler and 10-40 vol.% second filler.

    Verfahren zur Herstellung eines Materials für PTC-Widerstände
    6.
    发明公开
    Verfahren zur Herstellung eines Materials für PTC-Widerstände 失效
    一种用于生产材料PTC热敏电阻过程

    公开(公告)号:EP0780849A3

    公开(公告)日:1998-05-13

    申请号:EP96810818

    申请日:1996-11-22

    CPC classification number: H01C7/027

    Abstract: Ein Material für einen PTC-Widerstand wird durch Zumischen eines pulverförmigen Füllstoffs, bestehend aus mindestens einer Metallverbindung aus einer der Gruppen Boride, Karbide, Nitride, Oxide, Silicide zu einem semikristallinen thermoplastischen Matrixmaterial wie Polyethylen, insbesondere HD-Polyethylen in der Schmelze, anschliessendes Extrudieren zu Platten von einer Dicke von 1,3 mm - 2,5 mm und Vernetzung der verfestigten Platten durch Elektronenbestrahlung mit einer Dosis von 10 kGy - 75 kGy, vorzugsweise 25 kGy - 50 kGy hergestellt. Das Material ist reissfest und zeichnet sich durch hohe Kennlinienstabilität vor mit tieferen oder höheren Dosen bestrahlten Proben aus.

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