Power semiconductor module
    1.
    发明公开
    Power semiconductor module 审中-公开
    功率半导体模块

    公开(公告)号:EP2290680A1

    公开(公告)日:2011-03-02

    申请号:EP09168783.0

    申请日:2009-08-27

    Abstract: A power semiconductor module comprising at least one power semiconductor element (1, 1', 1") mounted on a substrate (2) and a base plate (3) thermally connected to the substrate (2) by a joint material (4) having a melting point lower than the operating temperature of the power semiconductor module.

    Abstract translation: 一种功率半导体模块,包括安装在基板(2)上的至少一个功率半导体元件(1,1',1“)和通过接合材料(4)热连接到基板(2)的基板(3) 熔点低于功率半导体模块的工作温度。

    A power-electronic arrangement
    3.
    发明公开
    A power-electronic arrangement 审中-公开
    Leistungselektronikanordnung

    公开(公告)号:EP2328172A1

    公开(公告)日:2011-06-01

    申请号:EP09012507.1

    申请日:2009-10-02

    Abstract: A power-electronic arrangement comprising semiconductor components (102, 103, 107), a heat exchanger (110), and an electrically conductive element (109) is presented. The heat exchanger comprises evaporator channels (111) and condenser channels (112) for working fluid. The electrically conductive element comprises a contact surface providing a thermal contact to outer surfaces of walls of the evaporator channels for transferring heat from the electrically conductive element to the evaporator channels. A main current terminal of each semiconductor component is bonded to the electrically conductive element which thus forms a part of a main current circuitry of a power system. As the main current terminal is directly bonded to the electrically conductive element cooled with the heat exchanger, the temperature gradients inside the semiconductor components can be kept moderate, and thus the temperatures inside the semiconductor components can be limited.

    Abstract translation: 提出了包括半导体部件(102,103,107),热交换器(110)和导电元件(109)的功率电子装置。 热交换器包括用于工作流体的蒸发器通道(111)和冷凝器通道(112)。 导电元件包括​​提供与蒸发器通道的壁的外表面的热接触的接触表面,用于将热量从导电元件传递到蒸发器通道。 每个半导体部件的主电流端子被接合到导电元件,由此形成电力系统的主电流电路的一部分。 由于主电流端子直接接合到用热交换器冷却的导电元件,所以半导体部件内部的温度梯度可以保持适中,从而可以限制半导体部件内部的温度。

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