公开(公告)号：EP2490256A1

公开(公告)日：2012-08-22

申请号：EP11155173.5

申请日：2011-02-21

Applicant: ABB Research Ltd.

Inventor： Wildner, Franz ,  Schulz, Nicola ,  Christen, Thomas

IPC: H01L23/62 ,  H01L25/07

CPC classification number: H01L25/072 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to an electronic arrangement, comprising an electronic device (12) being located in an electric conduct (18), and a switching means (20) for disconnecting said conduct (18) or for closing a failure conduct (22) bypassing the electronic device (12), wherein the switching means (20) is activatable by heat impact, and wherein the electronic device (12) and the switching means (20) are connected by a connection (24) comprising a high energy material (28), the high energy material (28) being adapted to transfer activation energy from the electronic device (12) to the switching means (20). This electrical arrangement (10) provides improved safety properties with respect to a failure in the electronic device.

Abstract translation: 电子装置技术领域本发明涉及一种电子装置，其包括位于电气导体（18）中的电子装置（12）和用于断开所述导体（18）或用于闭合旁路故障导线（22）的开关装置（20） 所述电子设备（12），其中所述切换装置（20）可通过热冲击来激活，并且其中所述电子设备（12）和所述切换装置（20）通过包括高能材料（28）的连接（24）连接， ），所述高能材料（28）适于将活化能从所述电子设备（12）传递到所述切换装置（20）。 该电气装置（10）相对于电子装置的故障提供改进的安全性能。

公开(公告)号：EP2560468A1

公开(公告)日：2013-02-20

申请号：EP11178151.4

申请日：2011-08-19

Applicant: ABB Research Ltd.

Inventor： Liu, Chunlei ,  Schulz, Nicola ,  Kicin, Slavo

IPC: H05K3/32

CPC classification number: H05K3/321 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/33181 ,  H01L2224/82201 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83097 ,  H01L2224/83192 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83906 ,  H01L2224/97 ,  H01L2924/1305 ,  H01L2924/13055 ,  H05K2201/10674 ,  H05K2203/1131 ,  H05K2203/1484 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/83

Abstract: A method of connecting elements (102-106) of a plurality of elements (102-106) to one another is described. The method comprises applying solder material (110) on a first element (102) of the plurality of elements (102-106). The solder material (110) comprises a liquidus temperature. The method comprises applying sinter material (108) on a second element (103) of the plurality of elements (102-104). The sinter material (108) comprises a sintering temperature. The method comprises assembling the first element (102) and a third element (104, 504) of the plurality of elements (102-106), assembling the second element (103) and a fourth element (106) of the plurality of elements (102-106), soldering the first element (102) and the third element (104) to one another, and sintering the second element (103) and the fourth element (106) to one another. In order to accomplish short process duration, reduced costs and an increased throughput, the sintering and the soldering are simultaneously executed.

Abstract translation: 被描述的元件（102-106），以彼此的多个连接元件（102-106）的方法。 该方法包括的元素的多元性（102-106）的第一元件（102）上施加的焊料材料（110）。 焊接材料（110）包括的液相线温度。 该方法包括的元素的多元性（102-104）的第二元件（103）上施加烧结材料（108）。 的烧结材料（108）包括烧结温度。 该方法包括组装元件的多元性（102-106）的所述第一元件（102）和第三元件（104，504），在组装所述第二元件（103）和元素的多个第四元件（106）（ 102-106），焊接所述第一元件（102）和所述第三元件（104）彼此连接，和烧结所述第二构件（103）和所述第四元件（106）彼此连接。 为了实现短的持续时间的过程，降低了成本，在增加产量，烧结和焊接被同时执行。

公开(公告)号：EP2544229A1

公开(公告)日：2013-01-09

申请号：EP11172958.8

申请日：2011-07-07

Applicant: ABB Research Ltd.

Inventor： Schulz, Nicola ,  Schuderer, Juergen ,  Behzadi, Bahar ,  Brem, Franziska

IPC: H01L23/62 ,  H01L25/07

CPC classification number: H01L25/07 ,  H01L23/48 ,  H01L23/62 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29082 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/83901 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The present invention relates to a power semiconductor arrangement (10) comprising a power semiconductor device (12), having an emitter electrode and a collector electrode, wherein the collector electrode is electrically connected to a lower electrode (14) and wherein the emitter electrode is electrically connected to an upper electrode (16), wherein the arrangement (10) further comprises a failure mode contact element (30) and a low temperature melting material (28), the low temperature melting material (28) being arranged between the failure mode contact element (30) and the semiconductor device (12), wherein the failure mode contact element (30) is spring loaded towards the low temperature melting material (28) and comprises at least one contact portion (32) being spaced apart from the lower electrode (14) in a distance being smaller or equal than the thickness of the low temperature melting material (28) in a regular working mode of the power semiconductor arrangement (10). A power semiconductor arrangement (10) according to the invention provides an improved failure mode.

Abstract translation: 本发明涉及包括具有发射极电极和集电极电极的功率半导体器件（12）的功率半导体装置（10），其中集电极电极电连接到下电极（14），并且其中发射极电极是 （10）还包括故障模式接触元件（30）和低温熔化材料（28），所述低温熔化材料（28）布置在所述故障模式 （30）和所述半导体器件（12），其中所述故障模式接触元件（30）朝向所述低温熔融材料（28）被弹簧加载并且包括至少一个接触部分（32），所述接触部分 在所述功率半导体装置（10）的正常工作模式下，所述电极（14）的距离小于或等于所述低温熔化材料（28）的厚度。 根据本发明的功率半导体装置（10）提供了改进的故障模式。

公开(公告)号：EP2485256A2

公开(公告)日：2012-08-08

申请号：EP11163114.9

申请日：2011-04-20

Applicant: ABB Research Ltd.

Inventor： Kicin, Slavo ,  Schulz, Nicola ,  Rahimo, Munaf ,  Schnell, Raffael

IPC: H01L23/367 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The invention relates to a semiconductor device (1). In order to obtain a small and simple semiconductor device with efficient cooling, a first electrically conducting cooling element (2) is in contact with the first electrodes (8) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the first electrodes (8) of the semiconductor elements to an external apparatus. A second electrically conducting cooling element (3) is in contact with the second electrodes (13) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the second electrodes of the semiconductor elements (4) to an external apparatus. The semiconductor device (1) comprises an interface (12) which is electrically connected to gates of the semiconductor elements (4) for external control of the state of the semiconductor elements.

Abstract translation: 本发明涉及半导体器件（1）。 为了获得具有有效冷却的小而简单的半导体器件，第一导电冷却元件（2）与半导体元件（4）的第一电极（8）接触，用于转发来自半导体元件的热负荷（ 并且用于将半导体元件的第一电极（8）电连接到外部设备。 第二导电冷却元件（3）与半导体元件（4）的第二电极（13）接触，用于从半导体元件（4）传递热负载并用于电连接半导体元件的第二电极（ 4）到外部设备。 半导体器件（1）包括与半导体元件（4）的栅极电连接的接口（12），用于外部控制半导体元件的状态。

公开(公告)号：EP2528092A1

公开(公告)日：2012-11-28

申请号：EP11167810.8

申请日：2011-05-27

Applicant: ABB Research Ltd.

Inventor： Kicin, Slavo ,  Schulz, Nicola ,  Häfner, Jürgen ,  Liu, Chunlei ,  Hamidi, Amina ,  Fabian, Jan-Henning

IPC: H01L23/62 ,  H01L25/07 ,  H01L21/60

CPC classification number: H01L25/072 ,  H01L23/62 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/29339 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/83801 ,  H01L2224/8382 ,  H01L2224/8384 ,  H01L2224/97 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A semiconductor device (509a, b) comprises a semiconductor chip (504a, b) comprising a bottom electrode and a top electrode and a bottom electrode-baseplate (502). The bottom electrode-baseplate (502) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a top electrode-baseplate (508). The top electrode-baseplate (508) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a first preform (506a, b) made of material configured for supporting a creation of an electrically conductive alloy when being melted. In order to provide a semiconductor device having enhanced characteristics, the bottom electrode of the semiconductor chip (504a, b) is thermally and electrically connected to the bottom electrode-baseplate (502) via a first bonding layer (618), the top electrode of the semiconductor chip (504a, b) is thermally and electrically connected to a first side of the first preform (506a, b) via a second bonding layer (620), and the second side of the first preform (506a, b) is thermally and electrically connected to the top electrode-baseplate (508) via a third bonding layer (624).

Abstract translation: 半导体器件（509a，b）包括具有底部电极和顶部电极以及底部电极基板（502）的半导体芯片（504a，b）。 底部电极基板（502）是导电且导热的。 半导体器件（509a，b）包括顶部电极基板（508）。 顶部电极基板（508）是导电且导热的。 半导体器件（509a，b）包括由材料制成的第一预制件（506a，506b），所述第一预制件被构造成用于在熔化时支持导电合金的形成。 为了提供具有增强特性的半导体器件，半导体芯片（504a，b）的底部电极经由第一键合层（618）与底部电极基板（502）热和电连接， 半导体芯片（504a，b）经由第二结合层（620）热和电连接到第一预成型件（506a，506b）的第一侧，并且第一预成型件（506a，506b）的第二侧是热 并经由第三结合层（624）电连接到顶部电极基板（508）。

公开(公告)号：EP2503595A1

公开(公告)日：2012-09-26

申请号：EP12153710.4

申请日：2012-02-02

Applicant: ABB Research Ltd.

Inventor： Liu, Chunlei ,  Schulz, Nicola ,  Kicin, Slavo

IPC: H01L23/62 ,  H01L25/07

CPC classification number: H01L25/072 ,  H01L23/3735 ,  H01L23/492 ,  H01L23/62 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/03505 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/0568 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29298 ,  H01L2224/32506 ,  H01L2224/37147 ,  H01L2224/3718 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/83805 ,  H01L2224/8384 ,  H01L2224/84424 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/8448 ,  H01L2224/8484 ,  H01L2224/85205 ,  H01L2224/92246 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

Abstract: The present invention relates to a power semiconductor module comprising a semiconductor device (12), in particular an insulated gate bipolar transistor, a reverse conductive insulated gate bipolar transistor, or a bi-mode insulated gate transistor, with an emitter electrode and a collector electrode, wherein an electrically conductive upper layer (14) is sintered to the emitter electrode, the upper layer (14) at least partly being capable of forming an eutecticum with the semiconductor of the semiconductor device (12) and at least partly having a coefficient of thermal expansion which differs from the coefficient of thermal expansion of the semiconductor in a range of ≤ 250%, in particular ≤ 50%, and wherein an electrically conductive base plate (20) is sintered to the collector electrode, and wherein the semiconductor module (10) further comprises an electrically conductive area (24) being electrically isolated from the base plate (20) and being connected to the upper layer (14) via a direct electrical connection (22). A semiconductor module according to the invention is easy to prepare, has an improved reliability and exhibits short circuit failure mode capacity.

Abstract translation: 本发明涉及一种功率半导体模块，其包括半导体器件（12），特别是绝缘栅双极晶体管，反向导通绝缘栅双极晶体管或双模绝缘栅晶体管，其具有发射极和集电极 ，其中将导电上层（14）烧结到所述发射极，所述上层（14）至少部分地能够与半导体器件（12）的半导体形成共晶，并且至少部分地具有 热膨胀与半导体的热膨胀系数不同，在‰÷250％的范围内，特别是‰¤50％，其中将导电基板（20）烧结到集电极上，其中半导体 模块（10）还包括导电区域（24），其与基板（20）电隔离并连接到上层（ 14）通过直接电连接（22）。 根据本发明的半导体模块易于准备，具有改进的可靠性并且具有短路故障模式容量。

公开(公告)号：EP2302674A1

公开(公告)日：2011-03-30

申请号：EP09171570.6

申请日：2009-09-29

Applicant: ABB Research Ltd.

Inventor： Schulz, Nicola ,  Hartmann, Samuel ,  Trüssel, Dominik

IPC: H01L23/498 ,  H01L25/07

CPC classification number: H01L23/49811 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to an electrical terminal (10) for an electronic circuit module, the terminal consisting of an electrical contact device (16) for externally contacting the electronic circuit module, the contact device (16) being electrically and mechanically interconnected with an integrally formed base element (14) for electrically contacting a metallised substrate (12) of the electronic circuit module when the terminal (10) is mounted on said metallised substrate (12). According to the invention the thickness of the thickness of the electrical contact device (16) is larger or at least partially larger than the thickness of the base element (14). The invention further relates to an electronic circuit module comprising at least one electrical terminal (10) and a method for manufacturing an electrical terminal (10).

Abstract translation: 本发明涉及在电端子（10），用于在电子电路模块，该终端用于从外部接触电子电路模块由...组成的电接触装置（16）的，所述接触装置（16）被电并在一体地形成机械互连 基座元件（14），用于电接触所述电子电路模块的金属化基片（12）当该终端（10）被安装在所述金属化的底物（12）。 。根据本发明的电接触装置（16）的厚度的厚度为大于或至少比所述基座元件（14）的部分厚度大。 本发明涉及进一步对电子电路模块，其包括至少一个电端子（10）和用于制造电端子（10）的方法。

公开(公告)号：EP2290680A1

公开(公告)日：2011-03-02

申请号：EP09168783.0

申请日：2009-08-27

Applicant: ABB Research Ltd.

Inventor： Schulz, Nicola ,  Duran, Hamit

IPC: H01L23/373

CPC classification number: H01L23/3735 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A power semiconductor module comprising at least one power semiconductor element (1, 1', 1") mounted on a substrate (2) and a base plate (3) thermally connected to the substrate (2) by a joint material (4) having a melting point lower than the operating temperature of the power semiconductor module.

Abstract translation: 一种功率半导体模块，包括安装在基板（2）上的至少一个功率半导体元件（1,1'，1“）和通过接合材料（4）热连接到基板（2）的基板（3） 熔点低于功率半导体模块的工作温度。

公开(公告)号：EP2485256A3

公开(公告)日：2018-01-03

申请号：EP11163114.9

申请日：2011-04-20

Applicant: ABB Research Ltd.

Inventor： Kicin, Slavo ,  Schulz, Nicola ,  Rahimo, Munaf ,  Schnell, Raffael

IPC: H01L23/367 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The invention relates to a semiconductor device (1). In order to obtain a small and simple semiconductor device with efficient cooling, a first electrically conducting cooling element (2) is in contact with the first electrodes (8) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the first electrodes (8) of the semiconductor elements to an external apparatus. A second electrically conducting cooling element (3) is in contact with the second electrodes (13) of the semiconductor elements (4) for forwarding a heat load from the semiconductor elements (4) and for electrically connecting the second electrodes of the semiconductor elements (4) to an external apparatus. The semiconductor device (1) comprises an interface (12) which is electrically connected to gates of the semiconductor elements (4) for external control of the state of the semiconductor elements.

Abstract translation: 本发明涉及一种半导体器件（1）。 为了获得具有高效冷却的小而简单的半导体器件，第一导电冷却元件（2）与半导体元件（4）的第一电极（8）接触，用于从半导体元件（ 4）并且用于将半导体元件的第一电极（8）电连接到外部装置。 第二导电冷却元件（3）与半导体元件（4）的第二电极（13）接触，用于传递来自半导体元件（4）的热负载并用于电连接半导体元件（4）的第二电极 4）到外部设备。 半导体器件（1）包括与半导体元件（4）的栅极电连接的接口（12），用于外部控制半导体元件的状态。

公开(公告)号：EP2530711A1

公开(公告)日：2012-12-05

申请号：EP11168071.6

申请日：2011-05-30

Applicant: ABB Research Ltd.

Inventor： Schulz, Nicola ,  Wildner, Franz ,  Christen, Thomas ,  Schuderer, Juergen

IPC: H01L25/07 ,  H01L23/62

CPC classification number: H01L23/62 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a power semiconductor arrangement comprising a power semiconductor device (14), having an emitter electrode and a collector electrode, wherein the collector electrode is electrically connected to a lower electrode (16) and the emitter electrode is electrically connected to an upper electrode (18), wherein the power semiconductor device (14) is arranged to at least one further power semiconductor device in parallel. In order to allow the power semiconductor arrangement (10) to provide an electrical short-circuit mode after a failure event having an improved reliability as well as durability, the arrangement (10) further comprises a high energy material (34) being connected to the power semiconductor device (14) and being connected to at least one failure current bypass unit (36, 54, 70), the failure current bypass unit (36, 54, 70) being arranged in parallel to the power semiconductor device (14) and being activatable by the high energy material (34) to form a current bypass.

Abstract translation: 本发明涉及一种功率半导体装置，包括具有发射电极和集电极的功率半导体器件（14），其中集电极电连接到下电极（16），并且发射极电连接到 上电极（18），其中所述功率半导体器件（14）被并行布置至至少一个另外的功率半导体器件。 为了允许功率半导体布置（10）在具有改善的可靠性和耐久性的故障事件之后提供电短路模式，所述布置（10）还包括高能材料（34），其连接到 功率半导体器件（14）并且连接到至少一个故障电流旁路单元（36,54,70），故障电流旁路单元（36,54,70）与功率半导体器件（14）并联布置，并且 可由高能材料（34）激活以形成电流旁路。