公开(公告)号：JP2003124455A

公开(公告)日：2003-04-25

申请号：JP2002280436

申请日：2002-09-26

Applicant: ABB SCHWEIZ AG

Inventor： CARROLL ERIC ,  APELDOORN OSCAR ,  STREIT PETER ,  WEBER ANDRE

IPC: H01L29/74 ,  H01L23/48 ,  H01L29/417 ,  H01L29/423 ,  H01L29/744

Abstract: PROBLEM TO BE SOLVED: To provide a turn-off high-performance semiconductor device which reduces loss optimally and where delay time does not increase or increases very slightly. SOLUTION: A turn-off electric power semiconductor device has an internal p-n-p-n type layer structure of a gate rectification thyristor and first gate at the side of a cathode. The device has second gate at the side of an anode, which contacts with an n-doped base layer, and has second gate contact point. A lead of the second gate which is concentrically arranged around an anode contact point in a rotational symmetry design contacts with the second gate contact point. The lead of the second gate is drawn out of parts and is electrically insulated from the anode contact point.

公开(公告)号：JP2004031947A

公开(公告)日：2004-01-29

申请号：JP2003163266

申请日：2003-06-09

Applicant: Abb Schweiz Ag ,  アーベーベー シュヴァイツ アクチェンゲゼルシャフト

Inventor： STREIT PETER ,  APELDOORN OSCAR ,  STEIMER PETER

IPC: H01L29/86 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/861

CPC classification number: H01L29/7392 ,  H01L29/417 ,  H01L29/423

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor device, having a control electrode which influences a semiconductor parameter, and especially a power diode.
SOLUTION: The power semiconductor device is provided with a pn junction between two sets of power electrodes (2, 3). The control electrode (4) is arranged in the region of the power electrode (3). A current, passing through the power electrode, is increased by supplying a current from the control electrode. As a result, a reverse current in a inhibit status of the device is increased. According to this constitution, a plurality of the power semiconductor devices are connected in series without using a snubber circuit for protection against an overvoltage.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003179222A

公开(公告)日：2003-06-27

申请号：JP2002282332

申请日：2002-09-27

Applicant: ABB SCHWEIZ AG

Inventor： APELDOORN OSCAR ,  CARROLL ERIC ,  STREIT PETER ,  WEBER ANDRE

IPC: H01L29/744 ,  H01L29/74 ,  H02M1/08 ,  H03K17/04 ,  H03K17/0812 ,  H03K17/10

Abstract: PROBLEM TO BE SOLVED: To enable the optimum operation of an IGDT by being adapted to the characteristics of the IGDT. SOLUTION: An integrated gate dual transistor (IGDT) is equipped with controllable gates (G1 and G2), a first gate (G1) that is supplied to a cathode side and at the same time is driven by a first gate current via a first gate terminal having low inductance, and a second gate (G2) that is supplied to an anode side and at the same time is driven by a second gate current via a second gate terminal with low inductance. In the switch-off operation of the IGDT, the rate of rising in the voltage of the IGDT is restricted via the two gates. The restriction of the rate of rising in the voltage of the IGDT prevents the voltage from being increased at a different speed in the series circuit of the IGDT, thus preventing the overheat and breakdown of each IGDT due to a nonuniform load. COPYRIGHT: (C)2003,JPO