公开(公告)号：US11863027B2

公开(公告)日：2024-01-02

申请号：US17450077

申请日：2021-10-06

Applicant: ABB Schweiz AG

Inventor： Kari Tikkanen

IPC: H02K11/00 ,  H02K15/00 ,  H02K11/40 ,  H02P27/04

CPC classification number: H02K11/0094 ,  H02K15/0068 ,  H02K11/40 ,  H02P27/04

Abstract: A rotating electrical machine and a method of manufacturing a rotating electrical machine. The machine including a machine frame, a rotor, a shaft attached to the rotor and bearings supporting the shaft and the rotor in the machine frame. The rotating electrical machine includes further an electrically conducting member having a hole, the electrically conducting member being attached to the frame such that the shaft extends through the hole.

公开(公告)号：US10050619B1

公开(公告)日：2018-08-14

申请号：US15433209

申请日：2017-02-15

Applicant: ABB Schweiz AG

Inventor： Jukka-Pekka Sjoroos ,  Kari Tikkanen

IPC: H03K17/56 ,  H03K17/567 ,  H03K17/691 ,  H03K19/177

Abstract: Unique systems, methods, techniques and apparatuses of a gate driver are disclosed herein. One exemplary embodiment is a gate driver comprising a first and second DC rail, a first converter arm including a first and second semiconductor device, a second converter arm including a third and fourth semiconductor device, an inductor, and a controller. The controller is configured to open and close the primary switching device by operating the semiconductor devices so as to transmit power between the gate driver and a gate of a primary switching device. The controller is configured to transmit a gate signal to the primary switching device by closing the second semiconductor device, then opening the second semiconductor device and closing the fourth semiconductor device in response to the gate of the primary switching device receiving power with a voltage greater than or equal in magnitude to the voltage of the second DC rail.

公开(公告)号：US20240088782A1

公开(公告)日：2024-03-14

申请号：US18464372

申请日：2023-09-11

Applicant: ABB Schweiz AG

Inventor： Olli Alkkiomäki ,  Panagiotis Kakosimos ,  Kari Tikkanen ,  Teppo Pirttioja ,  Aleksi Vulli

IPC: H02M1/32 ,  G01R31/26

CPC classification number: H02M1/327 ,  G01R31/2642 ,  H05K7/2089

Abstract: A field of electric drive devices and arrangements including a plurality of power semiconductor components formed in or on a common substrate, and more particularly to a method and an apparatus for monitoring the condition of a power semiconductor module. The method for monitoring the condition of a power semiconductor module of an electric drive device connected to an electric machine includes the steps of engaging a locking of the rotor of the electric machine at zero speed or at near zero speed by injecting DC currents by the electric drive device, initiating test temperature recording in the power semiconductor module, disengaging the locking the rotor of the electric machine by the electric drive device, terminating the test temperature recording and storing the recorded data of the test temperature as test temperature data, and determining the condition of the power semiconductor module utilising the test temperature data.

公开(公告)号：US20180234092A1

公开(公告)日：2018-08-16

申请号：US15433209

申请日：2017-02-15

Applicant: ABB Schweiz AG

Inventor： Jukka-Pekka Sjoroos ,  Kari Tikkanen

IPC: H03K17/567 ,  H03K17/691 ,  H03K19/177

CPC classification number: H03K19/17708 ,  H03K17/08128 ,  H03K17/691

Abstract: Unique systems, methods, techniques and apparatuses of a gate driver are disclosed herein. One exemplary embodiment is a gate driver comprising a first and second DC rail, a first converter arm including a first and second semiconductor device, a second converter arm including a third and fourth semiconductor device, an inductor, and a controller. The controller is configured to open and close the primary switching device by operating the semiconductor devices so as to transmit power between the gate driver and a gate of a primary switching device. The controller is configured to transmit a gate signal to the primary switching device by closing the second semiconductor device, then opening the second semiconductor device and closing the fourth semiconductor device in response to the gate of the primary switching device receiving power with a voltage greater than or equal in magnitude to the voltage of the second DC rail.