Feedback controller for resonant gate drive

    公开(公告)号:US10050619B1

    公开(公告)日:2018-08-14

    申请号:US15433209

    申请日:2017-02-15

    Applicant: ABB Schweiz AG

    Abstract: Unique systems, methods, techniques and apparatuses of a gate driver are disclosed herein. One exemplary embodiment is a gate driver comprising a first and second DC rail, a first converter arm including a first and second semiconductor device, a second converter arm including a third and fourth semiconductor device, an inductor, and a controller. The controller is configured to open and close the primary switching device by operating the semiconductor devices so as to transmit power between the gate driver and a gate of a primary switching device. The controller is configured to transmit a gate signal to the primary switching device by closing the second semiconductor device, then opening the second semiconductor device and closing the fourth semiconductor device in response to the gate of the primary switching device receiving power with a voltage greater than or equal in magnitude to the voltage of the second DC rail.

    Semiconductor failure prognostication

    公开(公告)号:US10393795B2

    公开(公告)日:2019-08-27

    申请号:US15659096

    申请日:2017-07-25

    Applicant: ABB Schweiz AG

    Abstract: Unique systems, methods, techniques and apparatuses of semiconductor failure prognostication. One exemplary embodiment is a power converter comprising a semiconductor switch and a converter control system. The converter control system is configured to turn on the semiconductor switch, measure a first voltage and a current during reverse conduction, estimate junction temperature of the semiconductor device, turn off the semiconductor device, measure a second voltage after turning off the semiconductor device, determine a resistance value using the second voltage measurement, determine an expected resistance value, predict a failure of the semiconductor device using the resistance value and the expected resistance value, and transmit a semiconductor device failure warning.

    FEEDBACK CONTROLLER FOR RESONANT GATE DRIVE
    4.
    发明申请

    公开(公告)号:US20180234092A1

    公开(公告)日:2018-08-16

    申请号:US15433209

    申请日:2017-02-15

    Applicant: ABB Schweiz AG

    CPC classification number: H03K19/17708 H03K17/08128 H03K17/691

    Abstract: Unique systems, methods, techniques and apparatuses of a gate driver are disclosed herein. One exemplary embodiment is a gate driver comprising a first and second DC rail, a first converter arm including a first and second semiconductor device, a second converter arm including a third and fourth semiconductor device, an inductor, and a controller. The controller is configured to open and close the primary switching device by operating the semiconductor devices so as to transmit power between the gate driver and a gate of a primary switching device. The controller is configured to transmit a gate signal to the primary switching device by closing the second semiconductor device, then opening the second semiconductor device and closing the fourth semiconductor device in response to the gate of the primary switching device receiving power with a voltage greater than or equal in magnitude to the voltage of the second DC rail.

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