公开(公告)号：US20190123172A1

公开(公告)日：2019-04-25

申请号：US16157435

申请日：2018-10-11

Applicant: ABB Schweiz AG

Inventor： Luca De-Michielis ,  Chiara Corvasce

IPC: H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

Abstract: An insulated gate power semiconductor device includes an (n−) doped drift layer between an emitter side and a collector side. A p doped protection pillow covers a trench bottom of a trench gate electrode. An n doped enhancement layer having a maximum enhancement layer doping concentration in an enhancement layer depth separates the base layer from the drift layer. An n doped plasma enhancement layer having a maximum plasma enhancement layer doping concentration covers an edge region between the protection pillow and the trench gate electrode. The n doping concentration decreases from the maximum enhancement layer doping concentration towards the plasma enhancement layer and the n doping concentration decreases from the maximum plasma enhancement layer doping concentration towards the enhancement layer such that the n doping concentration has a local doping concentration minimum between the enhancement layer and the plasma enhancement layer.

公开(公告)号：US10128361B2

公开(公告)日：2018-11-13

申请号：US15661631

申请日：2017-07-27

Applicant: ABB Schweiz AG

Inventor： Luca De-Michielis ,  Chiara Corvasce

IPC: H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L21/225

Abstract: An insulated gate power semiconductor device has an (n−) doped drift layer between an emitter side and a collector side. A trench gate electrode has a trench bottom and trench lateral sides and extends to a trench depth. A p doped first protection pillow covers the trench bottom. An n doped second protection pillow encircles the trench gate electrode at its trench lateral sides. The second protection pillow has a maximum doping concentration in a first depth, which is at least half the trench depth, wherein a doping concentration of the second protection pillow decreases towards the emitter side from the maximum doping concentration to a value of not more than half the maximum doping concentration. An n doped enhancement layer has a maximum doping concentration in a second depth, which is lower than the first depth, wherein the doping concentration has a local doping concentration minimum between the second depth and the first depth.

公开(公告)号：US20170323959A1

公开(公告)日：2017-11-09

申请号：US15661631

申请日：2017-07-27

Applicant: ABB Schweiz AG

Inventor： Luca De-Michielis ,  Chiara Corvasce

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L21/225

CPC classification number: H01L29/7397 ,  H01L21/2253 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/66348

Abstract: An insulated gate power semiconductor device has an (n−) doped drift layer between an emitter side and a collector side. A trench gate electrode has a trench bottom and trench lateral sides and extends to a trench depth. A p doped first protection pillow covers the trench bottom. An n doped second protection pillow encircles the trench gate electrode at its trench lateral sides. The second protection pillow has a maximum doping concentration in a first depth, which is at least half the trench depth, wherein a doping concentration of the second protection pillow decreases towards the emitter side from the maximum doping concentration to a value of not more than half the maximum doping concentration. An n doped enhancement layer has a maximum doping concentration in a second depth, which is lower than the first depth, wherein the doping concentration has a local doping concentration minimum between the second depth and the first depth.