公开(公告)号：US20180026570A1

公开(公告)日：2018-01-25

申请号：US15217571

申请日：2016-07-22

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Matthias Bator ,  Riccardo Bini ,  Munaf Rahimo

IPC: H02P29/024 ,  H03K17/081 ,  H03K17/567

CPC classification number: H03K17/567 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49113 ,  H02H3/023 ,  H02H7/005 ,  H03K17/102 ,  H03K17/122 ,  H03K17/125 ,  H03K17/6872 ,  H03K2017/6875 ,  H03K2217/0036 ,  H01L2924/00014

Abstract: A solid state switch has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. The at least one FET-type device is constructed with a first power loss profile based on a rated current of an electrical device; and the at least one thyristor-type device is constructed with a second power loss profile based on a surge current associated with the electrical device.

公开(公告)号：US10554201B2

公开(公告)日：2020-02-04

申请号：US15495091

申请日：2017-04-24

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Matthias Bator ,  Ricardo Bini ,  Munaf Rahimo

IPC: H03K17/082 ,  H03K5/15 ,  H03K17/13 ,  H03K17/687 ,  H03K17/567 ,  H03K5/00 ,  H03K17/10 ,  H03K17/12 ,  H02H3/05

Abstract: A solid state switch for connecting and disconnecting an electrical device has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. A gate driver is operative to send gate drive signals to the at least one FET-type device and to the at least one thyristor-type device for providing current to the electrical device. The gate driver is constructed to control a split of the current as between the at least one FET-type device and the at least one thyristor-type device.

公开(公告)号：US20180026623A1

公开(公告)日：2018-01-25

申请号：US15495091

申请日：2017-04-24

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Mathias Bator ,  Ricardo Bini ,  Munaf Rahimo

IPC: H03K17/082 ,  H03K17/13 ,  H01P1/36 ,  H02H1/00 ,  H02H9/04 ,  H03K5/15

Abstract: A solid state switch for connecting and disconnecting an electrical device has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. A gate driver is operative to send gate drive signals to the at least one FET-type device and to the at least one thyristor-type device for providing current to the electrical device. The gate driver is constructed to control a split of the current as between the at least one FET-type device and the at least one thyristor-type device.

公开(公告)号：US11196415B2

公开(公告)日：2021-12-07

申请号：US17029875

申请日：2020-09-23

Applicant: ABB SCHWEIZ AG

Inventor： Pietro Cairoli ,  Utkarsh Raheja ,  Thiago-Batista Soeiro ,  Lukas Hofstetter ,  Matthias Bator

IPC: H03K17/687 ,  H03K17/567

Abstract: A system for providing bi-directional power flow and power conditioning for high-voltage applications. The system including a normally-off four-quadrant power electronic switch having two gates and two normally-on junction field-effect transistor. The normally-off four-quadrant power electronic switch and the two normally-on junction field-effect transistors are coupled to one another in a bi-cascode configuration.

公开(公告)号：US10411694B2

公开(公告)日：2019-09-10

申请号：US15217571

申请日：2016-07-22

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Matthias Bator ,  Riccardo Bini ,  Munaf Rahimo

IPC: H03K17/567 ,  H03K17/687 ,  H02H7/00 ,  H03K17/10 ,  H03K17/12 ,  H02H3/02

Abstract: A solid state switch has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. The at least one FET-type device is constructed with a first power loss profile based on a rated current of an electrical device; and the at least one thyristor-type device is constructed with a second power loss profile based on a surge current associated with the electrical device.