公开(公告)号：US20180026570A1

公开(公告)日：2018-01-25

申请号：US15217571

申请日：2016-07-22

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Matthias Bator ,  Riccardo Bini ,  Munaf Rahimo

IPC: H02P29/024 ,  H03K17/081 ,  H03K17/567

CPC classification number: H03K17/567 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49113 ,  H02H3/023 ,  H02H7/005 ,  H03K17/102 ,  H03K17/122 ,  H03K17/125 ,  H03K17/6872 ,  H03K2017/6875 ,  H03K2217/0036 ,  H01L2924/00014

Abstract: A solid state switch has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. The at least one FET-type device is constructed with a first power loss profile based on a rated current of an electrical device; and the at least one thyristor-type device is constructed with a second power loss profile based on a surge current associated with the electrical device.

公开(公告)号：US10411694B2

公开(公告)日：2019-09-10

申请号：US15217571

申请日：2016-07-22

Applicant: ABB Schweiz AG

Inventor： Pietro Cairoli ,  Lukas Hofstetter ,  Matthias Bator ,  Riccardo Bini ,  Munaf Rahimo

IPC: H03K17/567 ,  H03K17/687 ,  H02H7/00 ,  H03K17/10 ,  H03K17/12 ,  H02H3/02

Abstract: A solid state switch has at least one FET-type device and at least one thyristor-type device coupled in parallel to the at least one FET-type device. The at least one FET-type device is constructed with a first power loss profile based on a rated current of an electrical device; and the at least one thyristor-type device is constructed with a second power loss profile based on a surge current associated with the electrical device.