Abstract:
A high voltage semiconductor device (1) with an improved edge termination arrangement is proposed. The high voltage semiconductor device (1) comprises a semiconductor substrate (2) with at least two differently doped regions (3, 4) and at least one junction (5) at which the two differently doped regions (3, 4) adjoin and an edge termination (9) at which the junction (5) reaches a surface of the semiconductor substrate (2). The edge termination (9) is covered by a grading layer (8) comprising a material having highly non-linear electrical resistivity characteristics due to an incorporation of microvaristors having an internal boundary structure. Electrical characteristics of the grading layer (8) comprising the microvaristors may be adapted to the specific requirements of the semiconductor device, particularly to its rated maximum voltage and to the length of the grading layer. Due to the highly non-linear electrical resistivity characteristics of the grading layer (8), critical local enhancements of an electric field adjacent to the edge termination may be prevented while at the same time keeping any leakage currents and frequency dependencies small.
Abstract:
Conductor arrangement (100) for reducing very fast transients in high voltage applications comprising a conductor element (10, 70) having a main conducting orientation x, a conductive annular shell element (20) coaxial to the conductor element (10, 70), thus forming an annular cavity (40) around the conductor element (10, 70). The annular shell element (20) in the main conducting orientation x comprises a first end portion (22) and a second end portion (24), wherein the first end portion (22) is conductively connected to the conductor element (10, 70). The second end portion (24) comprises an annular collar (26); wherein the collar (26) is substantially coaxial to the conductor element (10, 70), thus together with the conductor element (10, 70) forming a coaxial capacitor (30) which has a solid material filling (34). The capacitor (30) comprises a surge arrester (50; 51, 52; 34) which may serve as an energy conversion portion (50).
Abstract:
The invention relates to an electronic device comprising a substrate (2), a metal layer (3, 4, 5) formed on the substrate (2) and a field grading means (17, 23) located along an edge (12 to 16) of the metal layer (3, 4, 5). The field grading means (17) has a non-linear electrical resistivity. The invention relates also to method to produce such an electronic device.
Abstract:
The present invention relates to a varistor material for a surge arrester with target switching field strength ranging from 250 to 400 V/mm comprising ZnO forming a ZnO phase and Bi expressed as Bi 2 O 3 forming an intergranular bismuth oxide phase, said varistor material further comprising a spinel phase, characterized in that the amount of a pyrochlore phase comprised in the varistor material is such, that the ratio of the pyrochlore phase to the spinel phase is less than 0.15:1.
Abstract:
A multi-terminal surge arrester (10) is proposed, which comprises an active part (12) extending along a longitudinal direction (14) of the surge arrester (10), a first electrode (20) resting against a first end (18) of the active part (12), and a second electrode (24) resting against a second end (22) of the active part (12), which second end (22) opposes the first end (18) in the longitudinal direction (14) of the surge arrester (10). The surge arrester (10) further comprises an insulating fixing device (26) mechanically connecting and fixing the first electrode (20) and the second electrode (24), and an insulating housing (38) arranged around the active part (12). The active part (12) comprises at least two metal-oxide based varistor elements (34) and a further electrode (40, 40a, 40b) arranged between the at least two varistor elements (34), which further electrode (40, 40a, 40b) provides an externally accessible electrical connection. Therein, the surge arrester (10) is adapted for being insulated by surrounding air.