Abstract:
The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula Al x Ga 1-x N(0 3 N structures using (a)-langasite (La 3 Ga 5 SiO 14 ) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
Abstract:
White light source is proposed that includes light-emitting diode and phosphor transformer. The diode emits blue light that is applied to the transformer implemented as columnar-shaped single-crystalline phosphor. Part of the light, more than half in quantums, being mixed, is transformed here into yellow quantums. The both parts, being mixed together, give white light. Owing to the columnar structure of the transformer, the white light has a directional nature. This expands the spectrum of applications of the white light sources.
Abstract:
The invention falls within the realms of electronic engineering specifically of the luminescent diode devices and is intended for application in semi-conductor industries. The luminescent diode device contains crystals of light emitter located in a recess of a substrate having a reflecting side surface and also a concentrating lens. The lens is executed in the form of raster of annular and line elements or of the combination thereof, plotted on the flat conical surface or on the surface of second sequence or on the combination thereof. The angles of inclination of generatrixes to the optical axis of lens are keeping within the limits of 0 up to +/- 90.
Abstract:
Specialized arrangements of tile elements designed with a view to paving schemes which permit a plurality of tiles to function together in a plane to produce an output beam of particular and configurable divergence. Prefabricated tiles are 'mixed and matched' to form various combinations which will support a prescribed output characteristic with respect to illumination beam divergence. When a system is being assembled, it is no longer necessary to re-design at the primary optics level to achieve an application specific beam divergence. Rather, standard tiles are selected and used to pave large areas; the overall system having desired output characteristics. In this way, the lighting systems have selectable and configurable divergence and no requirement for manipulation of the fundamental unit.
Abstract:
A special reflector system is integrated with a cover element as part of an LED package. The device supports wavelength shifting medium and highly efficient light coupling to output beams including low divergence beams. The reflector is made at a surface which provides a high-low index mismatch to set up a total internal reflection in a conic section shaped area. The device permits direct on board mounting of semiconductor chips without having to provide for shaped recesses or ancillary reflector systems.
Abstract:
The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula Al x Ga 1-x N(0 3 N structures using (a)-langasite (La 3 Ga 5 SiO 14 ) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.
Abstract:
Heat transfer systems are presented with improved heat dissipation schemes based upon an asymmetric arrangement of Peltier elements to form a hot side of greater area than the cold side. This permits greater heat dissipation at the hot side of the heat transfer device into a suitable heat sink. A substantially planar system of radial symmetry is the basis of a highly efficient heat spreading scheme. The 'spokes' of the system are piewedge shaped Peltier semiconductor elements having a small heat transfer junction at one end and large heat transfer junction at the other.. In best versions, a concentric ring scheme has a cooled area at the center and a heat dump at the periphery. Semiconductor Peltier elements connect the two and provide a vehicle to carry heat radially away from a heat point source thermally coupled to the heat transfer system at an active area. These special arrangements are provided while still maintaining the necessary serial electronic circuit and parallel thermal circuit.
Abstract:
A special reflector system is integrated with a cover element as part of an LED package. The device supports wavelength shifting medium and highly efficient light coupling to output beams including low divergence beams. The reflector is made at a surface which provides a high-low index mismatch to set up a total internal reflection in a conic section shaped area. The device permits direct on board mounting of semiconductor chips without having to provide for shaped recesses or ancillary reflector systems.
Abstract:
The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0