公开(公告)号：WO2007091920A3

公开(公告)日：2007-10-18

申请号：PCT/RU2007000055

申请日：2007-02-06

Applicant: ABRAMOV VLADIMIR SEMENOVICH

Inventor： ABRAMOV VLADIMIR SEMENOVICH ,  SOSHCHIN NAUM PETROVICH ,  SUSHKOV VALERIY PETROVICH ,  SHCHERBAKOV NIKOLAY VALENTINOV ,  ALENKOV VLADIMIR VLADIMIROVICH ,  SAKHAROV SERGEI ALEKSANDROVICH ,  GORBYLEV VLADIMIR ALEKSANDROVI

IPC: C30B25/18 ,  H01L33/04 ,  C30B29/38 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/32 ,  B82Y20/00 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/50 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/34333

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula Al x Ga 1-x N(0 3 N structures using (a)-langasite (La 3 Ga 5 SiO 14 ) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract translation: 基于AlGaInN系统中的化合物和合金，生长用于产生白光发射的发光二极管和发光二极管的非极性外延异质结构的方法，包括气相沉积由式A1描述的一个或多个异质结构层的步骤 （0 3 Ga _{5 SiO 14 ）衬底用于降低异质结构中的缺陷密度和机械应力。}

公开(公告)号：WO2007091920B1

公开(公告)日：2007-11-29

申请号：PCT/RU2007000055

申请日：2007-02-06

Applicant: ABRAMOV VLADIMIR SEMENOVICH

Inventor： ABRAMOV VLADIMIR SEMENOVICH ,  SOSHCHIN NAUM PETROVICH ,  SUSHKOV VALERIY PETROVICH ,  SHCHERBAKOV NIKOLAY VALENTINOV ,  ALENKOV VLADIMIR VLADIMIROVICH ,  SAKHAROV SERGEI ALEKSANDROVICH ,  GORBYLEV VLADIMIR ALEKSANDROVI

IPC: C30B25/18 ,  H01L33/04 ,  C30B29/38 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/32 ,  B82Y20/00 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/50 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/34333

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula Al x Ga 1-x N(0 3 N structures using (a)-langasite (La 3 Ga 5 SiO 14 ) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract translation: 基于AlGaInN系统中的化合物和合金，生长产生白色发射和激光的发光二极管的非极性外延异质结构的方法包括由式Al描述的一个或多个异质结构层的气相沉积步骤 其中使用（a）阳离子生长A 3 N结构的步骤（0

公开(公告)号：DE112007000313T5

公开(公告)日：2009-07-02

申请号：DE112007000313

申请日：2007-02-06

Applicant: ABRAMOV VLADIMIR SEMENOVICH ,  SEOUL SEMICONDUCTOR CO LTD

Inventor： SOSHCHIN NAUM PETROVICH ,  SUSHKOV VALERIY PETROVICH ,  SHCHERBAKOV NIKOLAY VALENTINOVICH ,  ALENKOV VLADIMIR VLADIMIROVICH ,  SAKHAROV SERGEI ALEKSANDROVICH ,  GORBYLEV VLADIMIR ALEKSANDROVICH

IPC: C30B25/18 ,  H01L33/04 ,  C30B29/38 ,  H01L33/00 ,  H01L33/32

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0

公开(公告)号：FI20085827A

公开(公告)日：2008-09-04

申请号：FI20085827

申请日：2008-09-04

Applicant: ABRAMOV VLADIMIR SEMENOVICH ,  PETROVICHA BLACK SERGEY

Inventor： SOSHCHIN NAUM PETROVICH ,  SUSHKOV VALERIY PETROVICH ,  SHCHERBAKOV NIKOLAY VALENTINOV ,  ALENKOV VLADIMIR VLADIMIROVICH ,  SAKHAROV SERGEI ALEKSANDROVICH ,  GORBYLEV VLADIMIR ALEKSANDROVI ,  ABRAMOV VLADIMIR SEMENOVICH

IPC: C30B20060101 ,  H01L33/04 ,  C30B29/38 ,  H01L33/00 ,  H01L33/32

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0