公开(公告)号：WO1997037379A1

公开(公告)日：1997-10-09

申请号：PCT/US1997002512

申请日：1997-02-18

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： ADVANCED MICRO DEVICES, INC. ,  TOPRAE, Anthony, John ,  BARNETT, Gerald

IPC: H01L21/66

CPC classification number: B24B37/013 ,  H01L22/26

Abstract: A laser interferometry technique is used to measure the thickness of deposits on the wall of an etching chamber. The measurement of deposit thickness on an etching chamber wall furnishes an accurate and useful parameter for quantifying the condition and state of an etch chamber. The measurement of deposit thickness on an etching chamber wall also supplies a parameter that is measured dynamically, over time and without interruption, while semiconductor wafers are processed, so that the need for cleaning maintenance is predicted before production loss occurs but without interruption of fabrication processing.

Abstract translation: 激光干涉测量技术用于测量蚀刻室壁上沉积物的厚度。 蚀刻室壁上的沉积物厚度的测量提供了用于量化蚀刻室的状态和状态的准确和有用的参数。 蚀刻室壁上的沉积物厚度的测量还提供了在半导体晶片被处理时随时间而不间断地测量的参数，从而在生产损失发生之前预测清洁维护的需要，但是不会中断制造处理 。